RUI: Transition Metal Implantations in IN 0.53GA0.47As

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To obtain near-intrinsic, high-resistance layers, ion- implantation of transition metals Fe, Cr and V in n-type InGaAs, lattice matched to InP, will be performed. Both furnace and rapid thermal annealing techniques will be used for dopant activation. By performing Hall, secondary ion mass spectroscopy, transmission electron microscopy, X-ray diffraction and Rutherford back scattering measurements, the resistivity, carrier mobility, impurity concentration profile, crystal lattice perfection and defect density in the implanted layers; and solid solubility limits of the implant species will be determined. The position of the energy levels introduced by the transition metals and residual implant damage will be determined by photoluminescence measurements on the material and also by infrared photocurrent, deep-level transient spectroscopy, and temperature-dependent, current measurements on n-i-n and p-i-n diodes. Differential Hall measurements on the material and I-V measurements on the n-i-n diodes will be performed to establish the applicability of multiple transition metal implants for device isolation in monolithic integrated circuits. Using the high-resistivity material photoconductive detectors and p-i-n diodes will be fabricated and characterized by dc, optical, and microwave techniques. Based on material and device characteristics, the effectiveness of Fe-, Cr- and V- implants in providing high resistivity material with attractive properties will be determined. The transition metal implantations, rapid thermal annealing, and Rutherford back scattering measurements will be performed at Naval Research Laboratory, Washington, D.C. InGaAs material will be obtained from Professor Pallab Bhattacharya's laboratory in the University of Michigan, Ann Arbor.