Single quantum dot resonant tunnelling diodes and their integration

本项目的目标是将单量子点（QD）嵌入并集成到共振隧穿二极管（RTD）中。这种QD RTD将用于研究单个和紧密堆叠的QD的电子结构。这些结果将进行比较，以波函数映射实验进行低温扫描隧道光谱。将实现高峰谷电流比，以将两个单个QD RTD集成到单个芯片上的静态随机存取（SRAM）存储器单元中。为了将单个QD功能化并集成在RTD中，需要控制QD的横向位置。因此，我们计划进行量子点生长预图案化的基板上，这将是深入研究原位扫描隧道显微镜。

The goal of this project is to embed and integrate single quantum dots (QDs) into resonant tunnelling diodes (RTDs). Such QD RTDs will be used to investigate the electronic structure of single and closely stacked QDs. These results will be compared to wave function mapping experiments carried out by low temperature scanning tunnelling spectroscopy. High peak to valley current ratios will be realized to integrate two single QD RTDs into a static random access (SRAM) memory cell on a single chip. In order to functionalise and integrate single QDs in RTDs, the lateral position of the QDs needs to be controlled. We therefore plan to carry out QD growth on pre-patterned substrates, which will be investigated in depth by insitu scanning tunnelling microscopy.