Planar Wurtzite III-N Gunn Diodes for High Power Millimeter Wave and THz Electronics

摘要：标题：用于高功率毫米波和太赫兹电子器件的平面纤锌矿III-N Gunn三极管非技术描述：提出的研究的主要目标是开发创新的高功率iii -氮化毫米波和太赫兹电磁辐射源，填补长期以来能够在室温下工作的坚固，紧凑的固态器件的技术空白。这里提出的变革性Gunn三极管将利用多年来在iii -氮化物HEMT技术方面的经验，并专注于高质量材料的生长、制造、设计、建模和高功率高速iii -氮化物器件物理研究。通过提出的研究任务，一种全新的室温固态毫米波和太赫兹源架构将被用于各种应用，包括无线通信、汽车雷达、遥感、医学成像、隐藏目标探测、光谱和卫星间传输。在教育推广活动方面，该项目将使pi小组与佐治亚理工学院的综合科学、数学和计算教育中心密切合作，积极参与K-12教育。该项目将为乔治亚州STEM孵化器计划的K-12科学课程模块创建在线资源，并帮助教师设计绿色能源技术和节能相关主题的在线专业发展课程单元。来自代表性不足群体的学生将通过佐治亚理工学院的暑期工程/科学本科研究项目参与研究。该项目还将为高中S&amp；T教师提供佐治亚实习奖学金，用于继续教育和培养下一代工程科学教育劳动力。技术描述：拟议工作的成功完成将导致基于纤锌矿iii氮化物的gunn效应装置的首次演示。该方法的基础是使用先进的金属有机化学气相沉积（MOCVD）生长系统在高质量GaN衬底上生产具有原子光滑极性界面的GaN基HEMT-like三极管结构。新的异质结构Gunn三极管的设计和制造加工技术将被探索和研究，以促进所提出的器件的成功演示。通过应用基于玻尔兹曼输运方程全带系综电热蒙特卡罗解的最先进数值模拟软件，全面了解这些结构在高电场条件下的非平稳和高度非平衡载流子输运机制。这样的计算最近提供了有价值的见解，为什么以前尝试实现基于氮化镓的Gunn效应器件失败的原因，并促进了在三极管配置中识别原型hemt样异质结构，从而解决了这些缺点。提出的III-N Gunn三极管的成功演示将代表III-N电力电子器件研究领域的重大技术突破，为室温下高效产生高功率毫米波和太赫兹信号提供固态解决方案，以及通过纤锌矿iii -氮化材料系统中Gunn效应的首次表达，基础科学的进步。

Abstract Title: Planar Wurtzite III-N Gunn Triodes for High Power Millimeter Wave and THz ElectronicsNontechnical Description:The primary objective of the proposed research is to develop innovative high power III-nitride millimeter-wave and terahertz sources of electromagnetic radiation, filling a long-standing technology gap for robust, compact, solid-state devices capable of operating at room temperature. The transformative Gunn triodes proposed here will leverage many years of experience with III-nitride HEMT technologies, and focus on high-quality materials growth, fabrication, design, modeling and high-power high-speed III-nitride device physics research. Through the proposed research tasks, an entirely new architecture for room temperature solid state millimeter-wave and terahertz sources will be demonstrated for a host of diverse applications including wireless communications, automotive radar, remote sensing, medical imaging, concealed object detection, spectroscopy and inter-satellite transmissions. In education outreach activities, the program will enable a close collaboration between the PIs' groups and Georgia Tech's Center for Education Integrating Science, Mathematics and Computing to actively engage in K-12 education. The program will create online resources for the Georgia STEM Incubator initiatives for K-12 science course modules and help design online professional development curriculum units for teachers on green energy technologies and energy conservation related topics. Students from underrepresented groups will be involved in the research through Summer Undergraduate Research in Engineering/Science programs at Goergia Tech. The program will also host Georgia Intern Fellowship for high school S&T teachers for both continuing education and cultivation of the next-generation of the Science of Engineering education workforce.Technical Description:The successful completion of the proposed work shall result in the very first demonstration of a wurtzite III-nitride based Gunn-effect device. The basis of the proposed approach is the use of advanced metalorganic chemical vapor deposition (MOCVD) growth systems to produce GaN-based HEMT-like triode structures with atomically smooth polar interfaces on high-quality GaN substrates. Novel heterostructure Gunn triode designs and fabrication processing technologies will be explored and studied to facilitate successful demonstration of the proposed devices. A comprehensive understanding of the non-stationary and highly non-equilibrium carrier transport mechanisms under high electric-field conditions in these structures will be achieved through the application of state-of-the-art numerical simulation software based on full-band ensemble electro-thermal Monte Carlo solutions of the Boltzmann transport equation. Such calculations have recently provided valuable insight into the reasons why previous attempts to realize GaN-based Gunn effect devices have failed, and have facilitated the identification of a prototypical HEMT-like heterostructure in a triode configuration which addresses each of these shortcomings. The successful demonstration of the proposed III-N Gunn triodes will represent both a significant technological breakthrough in the field of III-N power electronic device research, providing a solid-state solution for the efficient generation of high-power millimeter-wave and terahertz signals at room temperature, as well as an advancement of fundamental science through the very first expression of the Gunn effect in the wurtzite III-nitride material system.