CAREER: Exploiting Many-Particle Physics for Low-Energy Nanoelectronics

在过去的40年里，微电子工业取得了令人难以置信的进步，把过去房间大小的超级计算机变成了现在口袋大小的移动设备；然而，随着金属氧化物半导体场效应晶体管——现代计算、存储和通信系统的主力——达到极限，这一令人难以置信的进步的继续已经明显放缓。特别重要的是，由于传统晶体管工作的基本物理原理，无法进一步降低能量。新型的超低能量晶体管可以实现一系列新的应用——从持久的“微尘”传感器和植入式生物电子学到一次充电可以使用一个月的手机——推动新的技术创新浪潮。在现有应用中使用超低能量晶体管将降低能耗，为社会提供显著的经济效益。作为这项工作的一部分，将创建一个以当前纳米技术研究为中心的引人入胜的短视频在线系列，以向公众推广科学和工程教育。这项工作旨在通过实验证明一种基于俄歇生成的多粒子物理的新型晶体管，以克服传统晶体管的能量限制。这种“俄歇效应场效应管”通过在半导体异质结上产生俄歇的栅极调制来工作。该项目的范围包括(i)由层状二维材料组成的范德华异质结构的制造，因为它们能够形成超薄无缺陷的突然异质结，从而增强俄钻的产生；（ii）研究如何设计器件结构的几何形状和掺杂来提高俄钻的产生率的理论努力。俄歇场效应管的发展将通过建立创新器件概念的基础物理学来扩展多个重要的科学研究领域。在此过程中，这项工作将扩大对量子结构中俄歇产生和重组过程的理解，这对于提高led、激光器和光电探测器的效率至关重要，因为俄歇现象会降低它们的性能。

The incredible advancements of the microelectronics industry over the past 40 years have transformed room-sized super computers of the past into pocket-sized mobile devices of the present; however, the continuation of this incredible progress has slowed significantly as the ultimate limits of the metal-oxide-semiconductor field-effect transistor -- the workhorse of modern computing, storage, and communication systems -- are reached. Of particular importance is the inability for further energy reduction due to the fundamental physics of how conventional transistors operate. Novel ultra-low-energy transistors could empower a range of new applications -- from long-lasting 'micro-dust' sensors and implantable bioelectronics to cell phones that last a month on a single charge -- driving a new wave of technological innovation. The use of ultra-low-energy transistors in existing applications will decrease energy consumption providing significant economic benefits to society. As part of this work, an online series of short, engaging videos centered on current nanotechnology research will be created to promote science and engineering education to the general public.This work seeks to experimentally demonstrate a new type of transistor based on the many-particle physics of Auger generation to overcome the energy limitations of conventional transistors. This 'Auger FET' operates through gate modulation of Auger generation across a semiconductor heterojunction. The scope of the project includes (i) the fabrication of a van der Waals heterostructure comprised of layered two-dimensional materials due to their ability to form super-thin defect-free abrupt heterojunctions that enhance Auger generation and (ii) a theoretical effort to investigate how the geometry and doping of the device structure can be engineered to improve the Auger generation rate. The development of the Auger FET will expand multiple areas of significant scientific research by establishing the foundational physics for an innovative device concept. In doing so, the work will expand understanding of Auger generation and recombination processes in quantum structures, which is critical for improving efficiency in LEDs, lasers, and photodetectors since Auger phenomena decrease their performance.