CAREER: Intermetallic Interfacial Thermal Transport for Advanced Electronics Manufacturing

金属间-半导体界面广泛用于电子和增材制造。通过这些界面的热传输影响散热，需要更好地了解这些热特性以降低电子工作温度。直接在半导体衬底上制造散热器件可以节省大量能源并减少有毒电子废物。由于改进的冷却而增加的可靠性在空间，国防和医疗设备等不容忍故障的应用中特别有价值。本研究考虑直接在电子设备上制造散热层。将研究金属间化合物-半导体界面与固溶体合金-半导体界面的热传输。另外的任务是通过激光照射改善界面传导性，并确定增加机械界面强度是否会增加热传输。该项目与K-12，社区学院，本科和研究生水平的教育活动相结合。一个主要的推广活动，题为“热传递通过增材制造”，使用动手实验教K-12学生，主要是来自代表性不足的群体，关于热传递的三种模式。 金属间化合物是通过在半导体衬底上直接增材制造高导热性散热装置而形成的，如微处理器和电力电子设备中所用。然而，金属间化合物的热性能知之甚少，不能从基体金属的热导率预测，不像固溶体合金与诺德海姆？的关系。最近的研究表明，硅化物（一种金属间化合物）与硅具有良好的热导率，但没有其他金属间化合物-半导体界面电导的报道。本研究探讨金属间化合物-半导体界面与固溶体合金-半导体热界面的性质。 此外，该项目探讨是否淬火在107？C/sec可以通过生长金属间晶界并减轻缺陷的多次激光曝光来减轻。研究了界面力学性能与界面热导率之间的关系。通过选择性激光熔化特别设计的合金以在半导体表面上形成金属间化合物来制备样品。热特性进行频域热反射工具。机械性能和热导率之间的关系仅在少数系统中进行了研究，因此该研究扩展了不同金属间化合物-半导体系统的知识。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Intermetallic-semiconductor interfaces are used widely in electronics and additive manufacturing. Thermal transport across these interfaces affects heat dissipation, and a better understanding of these thermal properties is needed to reduce electronic operating temperatures. Directly manufacturing heat removal devices onto semiconductor substrates can lead to substantial energy savings and a reduction in toxic electronic waste. The added reliability due to improved cooling will be especially valuable in failure-intolerant applications such as space, defense, and medical devices. This research considers the manufacture of heat removal layers directly onto electronic devices. The thermal transport in intermetallic-semiconductor interfaces versus solid-solution alloy-semiconductor interfaces will be studied. Additional tasks are to improve interfacial conductance through laser exposures and to determine whether increasing mechanical interfacial strength increases thermal transport. This project is integrated with educational activities at the K-12, community college, undergraduate, and graduate levels. A primary outreach activity, titled "Heat Transfer Thru Additive Manufacturing", uses hands-on experiments to teach K-12 students, largely from underrepresented groups, about the three modes of heat transfer. Intermetallics form via direct additive manufacture of high-thermal-conductivity heat-removal devices on semiconductor substrates, as used in microprocessors and power electronics. However, the thermal properties of intermetallics are poorly understood and cannot be predicted from base metal thermal conductivity, unlike solid-solution alloys with Nordheim?s relation. Recent research indicates that silicides (a type of intermetallic) have excellent thermal conductance with silicon, but no other intermetallic-semiconductor interfacial conductances have been reported. This research investigates the nature of intermetallic-semiconductor interfaces versus solid-solution alloy-semiconductor thermal interfaces. Furthermore, the project explores whether defects induced by quenching at 107 ?C/sec can be relieved by multiple laser exposures that grow the intermetallic grain boundaries and relieve defects. The relation between interfacial mechanical properties and interfacial thermal conductance are also examined. Samples are prepared by selective laser melting of specially designed alloys to form intermetallics on the semiconductor surface. Thermal characterization is performed with a frequency-domain thermoreflectance tool. The relationship between mechanical properties and thermal conductance has only been examined for a few systems, so this research expands knowledge of different intermetallic-semiconductor systems.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.