课题基金 / 基金详情

Integrated quantum photonics using van der Waals materials

Integrated quantum photonics using van der Waals materials
使用范德华材料的集成量子光子学
批准号:
1906096
负责人:
Vinod Menon
金额:
$38.62万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-07-01 至 2023-06-30

项目摘要

项目成果

Vinod Menon的其他基金

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相关文献

中文摘要
翻译
依赖和利用光和物质的量子特性的技术被吹捧为现代工业革命的下一个阶段。光由于其高速和特殊的噪声特性而成为量子技术中信息传输的首选介质,单光子是最基本的构件。然而,实现坚固的、与设备兼容的、可按需激活和控制的室温单一光子源一直是一个主要障碍。尽管已经有不同的材料系统显示了单光子发射,但它们在低温或不兼容的波长下工作,并且通常很难与传统的光子材料或cmos工艺相结合。为了应对这一挑战,该项目旨在开发基于腔耦合范德华(VDW)材料的单发光体。具体地说,该计划将重点放在六方氮化硼上,这是一种宽带隙半导体,可以容纳光学有源点缺陷,在可见光和近红外线发射。结合缺陷工程和拾取贴片技术,该项目将开发一系列光限制混合结构,旨在增强单光子发射体的光收集和光发射,并增加光-物质相互作用的强度。总体目标是开发基于VDW材料实现量子光子器件的关键构件。技术摘要:发展能够在更高温度下工作、与CMOS兼容、可以与传统光子学集成的量子光子技术是非常可取的。该项目正是通过使用单层或几层VDW材料与氮化硅光子平台相集成来满足这一需求,其中我们利用了这两种材料系统的独特优势。VDW材料是量子光子学中非常有吸引力的有源元件平台,因为它们具有较大的光-材料相互作用强度,与各种衬底兼容,以及拾取和放置制造技术。特别是,六方氮化硼具有较宽的禁带宽度(6 EV),允许较宽的光谱范围和中等禁带缺陷态。此外,由于VDW的几层结构,这些系统对应变和介电环境表现出极高的敏感性,这将被用来控制缺陷的激活和与微谐振器和波导等纳米光子结构的集成。氮化硅,由于其低损耗和成熟的制造工艺,已被公认为是制作无源光子器件的优良材料,将为实现量子光子芯片提供平台。具体的计划目标包括:(I)在hBN中对缺陷态进行确定性工程以实现单光子发射,以及(Ii)将发射体集成到微谐振器和混合腔系统中,以增强自发辐射并实现强耦合方案。该计划将有助于在新兴的量子光电子学交叉学科领域培养来自不同背景的学生。在计划的外展活动中,一个亮点是为城市学院的本科生举办的实践量化技术研讨会。该奖项反映了NSF的法定使命,并通过使用基金会的智力优势和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
Technologies that rely on and exploit the quantum properties of light and matter are touted as the next phaseof the modern industrial revolution. Light has become the preferred medium for information transfer inquantum technologies due to its high speed and exceptional noise properties, with single photons acting asthe most basic building blocks. However, the realization of robust, device-compatible, room-temperaturesingle photon sources that can be activated and controlled on demand has been a major hurdle. Althoughthere have been different material systems that have shown single photon emission, they operate at lowtemperature or at incompatible wavelengths, and are often hard to integrate with conventional photonicmaterials or CMOS technology. To address this challenge, this project aims to develop single photonemitters based on cavity-coupled van der Waals (vdW) materials. Specifically, the program will focus onhexagonal boron nitride, a wide bandgap semiconductor that can host optically active point defects withemission in the visible and near infra-red. Combining defect engineering and "pick-and-place" techniques,the project will develop a range of light-confining hybrid structures designed to enhance light collectionand light emission from single photon emitters as well as increase the strength of light-matter interaction.The overarching goal is to develop the key building blocks for realizing quantum photonic devices basedon vdW materials.Technical Abstract:The development of quantum photonic technologies that can operate at elevated temperatures, are CMOScompatible, and can be integrated with conventional photonics is highly desirable. This project addressesprecisely this need through the use of monolayer or few-layer vdW materials integrated with siliconnitride photonic platforms where we exploit the unique strengths of the two material systems. vdWmaterials are a highly attractive platform for active components in quantum photonics due their largelight-mater interaction strength, compatibility with a variety of substrates, and pick-and-place fabricationtechniques. In particular, hexagonal boron nitride has a wide bandgap (6 eV), which allows for a broadlyaccessible spectral range and mid gap defect states. Furthermore, owing to the few-layer vdW structure,these systems show extreme susceptibility to strain and the dielectric environment, which will beexploited to control defect activation and integration with nanophotonic structures such as microresonatorsand waveguides. Silicon nitride, already recognized as an excellent material for passivephotonic devices due to its low loss and mature fabrication protocols will form the platform for realizingthe quantum photonic chips. Specific program goals include: (i) Deterministic engineering of defectstates in hBN for single photon emission, and (ii) Integration of emitters into micro-resonators and hybridcavity systems for enhancing spontaneous emission and achieving the strong coupling regime.The program will help train students from diverse backgrounds in the emerging interdisciplinary field ofquantum optoelectronics. A highlight among the planned outreach activities is a hands-on quantumtechnologies workshop for undergraduate students at City College.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(8)
专著(0)
科研奖励(0)
会议论文
Room-temperature single photon emitters in cubic boron nitride nanocrystals
立方氮化硼纳米晶体中的室温单光子发射器
DOI: 10.1364/ome.386791
发表时间: 2020
期刊: Optical Materials Express
影响因子: 2.8
作者: [López-Morales, Gabriel I., Almanakly, Aziza, Satapathy, Sitakanta, Proscia, Nicholas V., Jayakumar, Harishankar, Khabashesku, Valery N., Ajayan, Pulickel M., Meriles, Carlos A., Menon, Vinod M.]
通讯作者: Menon, Vinod M.
DOI: 10.1016/j.commatsci.2021.111041
发表时间: 2021-11
期刊: Computational Materials Science
影响因子: 3.3
作者: [Gabriel I. L'opez-Morales;A. Hampel;G. López;V. Menon;Johannes Flick;C. Meriles]
通讯作者: Gabriel I. L'opez-Morales;A. Hampel;G. López;V. Menon;Johannes Flick;C. Meriles
DOI: 10.1364/ome.434083
发表时间: 2021-09
期刊: Optical Materials Express
影响因子: 2.8
作者: [Gabriel I. L'opez-Morales;Mingxing Li;A. Hampel;S. Satapathy;N. Proscia;H. Jayakumar;A. Lozovoi;D. Pagliero;G. López;V. Menon;Johannes Flick;C. Meriles]
通讯作者: Gabriel I. L'opez-Morales;Mingxing Li;A. Hampel;S. Satapathy;N. Proscia;H. Jayakumar;A. Lozovoi;D. Pagliero;G. López;V. Menon;Johannes Flick;C. Meriles
DOI: 10.1515/nanoph-2020-0187
发表时间: 2019-06
期刊: Nanophotonics
影响因子: 7.5
作者: [N. Proscia;H. Jayakumar;X. Ge;Gabriel I. L'opez-Morales;Zav Shotan;Weidong Zhou;C. Meriles;V. Menon]
通讯作者: N. Proscia;H. Jayakumar;X. Ge;Gabriel I. L'opez-Morales;Zav Shotan;Weidong Zhou;C. Meriles;V. Menon
Strain engineering of exciton-polaritons in 2D Semiconductors
  • 批准号:
    2130544
  • 项目类别:
    Standard Grant
  • 资助金额:
    $45.0万
  • 财政年份:
    2021
  • 负责人:
    Vinod Menon
  • 依托单位:
NCS-FO: Integrated neurocognitive process models of individual differences in children’s math problem solving strategies, learning and development
  • 批准号:
    2024856
  • 项目类别:
    Standard Grant
  • 资助金额:
    $50.0万
  • 财政年份:
    2020
  • 负责人:
    Vinod Menon
  • 依托单位:
QII-TAQS: Chip-Scale Quantum Emulators Based on Polaritonic Lattices
  • 批准号:
    1936351
  • 项目类别:
    Standard Grant
  • 资助金额:
    $194.82万
  • 财政年份:
    2019
  • 负责人:
    Vinod Menon
  • 依托单位:
Collaborative Research: OP-Interface States and Excitons at Heterojunctions Between Two and Three Dimensional Materials Systems
  • 批准号:
    1709996
  • 项目类别:
    Standard Grant
  • 资助金额:
    $22.0万
  • 财政年份:
    2017
  • 负责人:
    Vinod Menon
  • 依托单位:
国内基金
海外基金
Research on Quantum Field Theory without a Lagrangian Description
  • 批准号:
    24ZR1403900
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    SATOSHI NAWATA
  • 依托单位:
Simulation and certification of the ground state of many-body systems on quantum simulators
  • 批准号:
    --
  • 项目类别:
    --
  • 资助金额:
    40万元
  • 批准年份:
    2020
  • 负责人:
    Abolfazl Bayat
  • 依托单位:
Mapping Quantum Chromodynamics by Nuclear Collisions at High and Moderate Energies
  • 批准号:
    11875153
  • 项目类别:
    面上项目
  • 资助金额:
    60.0万元
  • 批准年份:
    2018
  • 负责人:
    MARCO RUGGIERI
  • 依托单位:
高温气化过程中煤灰矿物质演变规律的量子化学计算与实验研究
  • 批准号:
    50906055
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    20.0万元
  • 批准年份:
    2009
  • 负责人:
    乌晓江
  • 依托单位: