Spin coherence of silicon vacancy qubits in SiC

我们将根据晶体多型和同位素组成测量不同温度下碳化硅（SiC）中单硅空位和相关缺陷的自旋晶格弛豫时间和自旋相干时间。为此，我们将开发用于自旋初始化/读出的光自旋泵浦方案和用于自旋操纵的脉冲磁共振技术。在我们的实验中，我们将使用显微镜安排，这将应用于在环境条件下对单个硅空位自旋进行量子运算。SiC中的硅空位潜在地结合了不同固态系统的大多数优点，这些系统被认为是基于自旋的量子计算的现实候选者。这包括无需外部磁场的光学初始化，同位素纯化晶体中预期的非常长的自旋相干性，室温自旋相干性和开发的微加工技术。如果成功，我们的项目将证明碳化硅作为纳米级量子技术材料的高潜力，并刺激该领域的进一步研究。

We will measure spin lattice relaxation time and spin coherence time of single silicon vacancies and related defects in silicon carbide (SiC) at different temperatures depending on crystal polytype and isotopic composition. To this end we will exploit an optical spin pumping scheme for spin initialization/readout and pulsed magntetic resonance techniques for spin manipulation. In our experiments we will use a microscopy arrangement, which will be applied to perform quantum operations on a single silicon vacancy spin at ambient conditions. Silicon vacancies in SiC potentially combine most of the advantages of different solid state systems, which are considered as realistic candidates for spin-based quantum computing. This includes optical initialization without need of external magnetic fields, expected very long spin coherence in isotopically purified crystals, room temperature spin coherence and developed microfabrication techniques. If successful, our project will prove the expected high potential of silicon carbide as material for nanoscale quantum technologies and stimulate further researches in this field.