Interaction-driven groundstates of few-layer graphene

该理论项目旨在对单层、双层和三层石墨烯的相互作用基态进行控制和定量描述。基于包含费米能附近$\pi$-带的低能模型的a -initio参数，我们将利用最近在泛函重整化群中的改进来分析这些低能量和低温下的几层体系的主导相关函数。我们的研究将在理论上预测双层和三层中不同基态之间更可控的相边界，并为有序温度和间隙能量尺度提供可靠的估计。特别是，我们将研究反铁磁有序态和自发霍尔态之间的竞争，这两者都与石墨烯的自旋电子学应用相关。结合计划的从头算工作，我们将分析将系统调整到或退出这些状态的可能性。

This theory project aims at a controlled and quantitative description of the interacting groundstates of mono-, bi- and trilayer graphene. Based on ab-initio parameters for a low-energy model containing the $\pi$-bands near the Fermi energy, we will make use of recent improvements in the functional renormalization group to analyze the dominant correlation functions of these few-layer systems at low energies and low temperatures. Our studies will predict theoretically more controlled phase boundaries between different groundstates in bi- and trilayers, and provide reliable estimates for the ordering temperatures and gap energy scales. In particular, we will investigate the competition between antiferromagnetic order and spontaneous Hall states, which both are of relevance for spintronics applications of graphene. In conjunction with planned ab-initio work we will analyze the possibilities to tune the systems into or out of these states.