CAREER: A novel Gallium Oxide based transistor for low-waste power conversion applications

提案编号：2043803主要研究员：Elaheh Ahmadi，标题：Career：一种用于低浪费功率转换应用的新型氧化镓晶体管机构：密歇根大学非技术摘要迫切需要新的器件技术来有效管理和分配2000V-20000V电压范围内的电力。然而，目前的技术已经不能满足这些大功率电子应用的效率和可靠性要求。拟议的超高压开关将实现2000V-20000V电压范围内的高效大功率开关，这是许多系统所需的，包括分布式电网系统、工业自动化、电动汽车和包括高速列车在内的电动公共交通。综合教育计划旨在通过直接参与拟议的研究活动，激励青年学生，特别是女学生和来自代表人数不足的群体的学生，从事STEM学习和职业。为高中生准备的教程将在Pi的研究网站和YouTube上广泛提供。该项目的目标是展示击穿电压超过3KV、比导通电阻低于1毫欧-平方厘米的E模式β-Ga2O3场效应晶体管(FinFET)在15 kHz频率下的开关效率高于98%。该职业生涯计划的科学目标是：(1)深入调查和实验研究倾斜侧壁和翅片间氮离子注入对电场的影响，以提高击穿电压。(Ii)金属-有机化学气相沉积(MOCVD)和卤化物气相外延(HVPE)外延生长的FinFET的制备和表征，分析和比较生长工艺和材料质量对器件性能的影响。这项研究有助于今后为每个工艺模块选择合适的生长技术。(Iii)系统研究衬底厚度对RON等器件特性的影响。(4)利用等离子体辅助分子束外延技术在鳍片侧壁生长β-(Al，Ga)_2O_3，研究了再生长条件对沟道电子迁移率、界面陷阱密度和FinFET特性的影响。这将是该材料系统中第一次展示侧壁再生长。(V)用PAMBE开发坚固可靠的Hf(Si)O2介质，并调查和分析沉积条件对介电质量(击穿、介电常数、漏电等)的影响。这将是该材料系统中第一次展示就地电介质沉积。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Proposal Number: 2043803Principal Investigator: Elaheh Ahmadi, Title: CAREER: A novel Gallium Oxide based transistor for low-waste power conversion applicationsInstitution: University of MichiganNontechnical AbstractThere is an urgent need for new device technologies to efficiently manage and distribute electrical power in the 2000V-20000V voltage range. The current technology, however, can no longer meet the efficiency and reliability requirements for these high-power electronic applications. The proposed ultra-high voltage switch will enable efficient high-power switches in the 2000V-20000V voltage range, which is required in many systems, including distributed grid systems, industrial automation, electric vehicles, and electrical mass transit including high-speed trains. The integrated education plan aims to motivate young students, especially female students and those from the underrepresented groups, to pursue STEM studies and careers by direct participation in the proposed research activities. The tutorials prepared for high school students will be made widely available on PI’s research website and YouTube. The scientific results will be disseminated in the form of articles in technical journals, conference presentations, and university seminars.Technical AbstractThe goal of this program is to demonstrate E-mode β-Ga2O3 fin field-effect transistors (FinFETs) with breakdown voltages beyond 3kV, specific on-resistance lower than 1 milli-ohm-cm-square switching efficiency higher than 98% at 15kHz frequency. The scientific goals of this CAREER plan are (i) A thorough investigation and experimentation into the impact of slanted-sidewall and N implantation in the inter-fin areas on electric fields to enhance breakdown voltage. (ii) Fabrication and characterization of FinFETs on both metal-organic chemical vapor deposition (MOCVD)-grown and halide vapor phase epitaxy (HVPE)-grown epi-structure to analyze and compare the impact of growth technique, and material quality on device performance. This study assists in selecting the appropriate growth technique for each process module in the future. (iii) A systematic study of the substrate thickness impact on device characteristics such as Ron. (iv) Development of β-(Al,Ga)2O3 regrowth on the fin sidewalls by plasma-assisted molecular beam epitaxy (PAMBE) and a complete investigation of the impact of regrowth conditions on electron mobility in the channel, interface trap density, and FinFET characteristics. This will be the first demonstration of sidewall regrowth in this material system. (v) Development of robust and reliable Hf(Si)O2 dielectrics by PAMBE as well as investigation and analysis of deposition conditions on dielectric quality (breakdown, dielectric constant, leakage, etc.). This will be the first demonstration of in-situ dielectric deposition in this material system.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.