Frequency-Comb-Enabled Intelligent Sensing in Millimeter-Wave and Terahertz
Frequency-Comb-Enabled Intelligent Sensing in Millimeter-Wave and Terahertz
批准号:
2214631
负责人:
Aydin Babakhani
金额:
$36.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2022
资助国家:
美国
项目状态:
未结题
起止时间:
2022-09-01 至 2025-08-31
中文摘要
用于产生和检测毫米波(毫米波)和太赫兹(THz)电磁波的硅基集成电路使雷达、安全、成像和光谱学方面的各种新技术成为可能。本项目的目标是开发一种新型的集成雷达,在很宽的毫米波/太赫兹频率范围内进行宽带相干传感。这项研究项目将产生增强型智能传感器,这些传感器可以被训练成识别具有特定属性的特定对象。毫米波和太赫兹电磁波可以穿透物体,也可以为我们提供深度信息。由毫米波/太赫兹足迹训练而成的实时智能传感器,在安全成像/传感、自动驾驶等方面具有巨大的应用潜力。太赫兹成像和传感系统不仅可以通过准确检测隐藏的物体和爆炸物来加强国土安全,还可以通过提高防撞汽车雷达的精度来防止每年在车祸中丧生的数万人。除了推动太赫兹技术的极限,该项目还将培养本科生和研究生成为太赫兹研究方面的专家,并对美国未来的半导体行业产生影响。首席调查员(PI)还将为K-12学生组织讲习班,并为高中教师提供实习机会。研究工作将有两个高度集成的推力。在第一个推力中,将设计、制造和测试一种新型的梳状雷达设备,可以在太赫兹频率范围内进行宽带相干检测和传感。该装置将基于Pi实验室开发的最新发射器和接收器芯片进行设计。这些芯片提供太赫兹频率梳,线宽非常窄,只有几赫兹。测量的梳音的赫兹级精度表明频率梳的高度稳定性,使其适合于光谱学应用。拟议的光谱系统将把频率范围扩大到600 GHz。第一次推力将产生一个完全集成的雷达芯片。为了提高接收器的灵敏度,将实现阵列。每个阵列单元将由一个宽带接收器组成,该接收器配有芯片上的天线。雷达传感器将被用来测量许多物体在广泛的频率范围内的频率响应。第二个推力是利用第一次推力产生的测量数据开发一个智能目标识别系统。该项目将使用机器学习算法根据物体与宽带太赫兹信号的相互作用对物体进行分类,从而可以根据物体的太赫兹透过率数据对任意物体进行分类。该奖项反映了NSF的法定使命,并通过使用基金会的智力优势和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
Silicon-based integrated circuits for generating and detecting millimeter-wave (mm-wave) and terahertz (THz) electromagnetic waves have enabled a variety of new technologies in radars, security, imaging, and spectroscopy. The objective of this project is to develop a novel integrated radar to perform broadband coherent sensing over a wide range of mm-wave/THz frequencies. This research project will result in enhanced intelligent sensors that can be trained to recognize certain objects with specific properties. The mm-wave and THz electromagnetic waves can penetrate through objects and provide us with depth information as well. A real-time intelligent sensor, which is trained with mm-wave/THz footprints of numerous objects, has a great potential to be used for many applications such as security imaging/sensing and autonomous driving. THz imaging and sensing systems not only can bolster homeland security with accurate detection of hidden objects and explosives, but also can prevent tens of thousands of lives lost in car accidents every year with increased accuracy of collision avoidance automotive radars. In addition to pushing the boundaries of THz technology, this project will train undergraduate and graduate students to become experts in THz research and make impacts to the future semiconductor industry in the United States. The principal investigator (PI) will also organize workshops to K-12 students and provide internship opportunity to high-school teachers. The research work will have two highly integrated thrusts. In the first thrust, a novel comb-based radar device that can perform broadband coherent detection and sensing in the THz frequency range will be designed, fabricated, and tested. This device will be designed based on recent transmitter and receiver chips that were developed in PI’s laboratory. These chips offer THz frequency combs with very narrow linewidths of a few hertz. The hertz-level accuracy of the measured comb tones indicates high stability of the frequency comb making it suitable for spectroscopy applications. The proposed spectroscopy system will expand the frequency range to 600 GHz. The first thrust will result in a fully integrated radar chip. To improve the sensitivity of the receiver, an array will be implemented. Each array element will consist of a broadband receiver quipped with an on-chip antenna. The radar sensor will be used to measure the frequency response of numerous objects over a wide range of frequencies. The second thrust is to develop an intelligent object recognition system by using the measurement data generated in the first thrust. The project will use machine learning algorithms to classify objects based on their interactions with broadband THz signals so that arbitrary objects can be categorized according to their THz transmittance data.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(2)
专著(0)
科研奖励(0)
会议论文
A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS
采用 90 nm SiGe BiCMOS 的 0.4-4 THz p-i-n 二极管倍频器
DOI:
10.1109/jssc.2023.3289129
发表时间:
2023
期刊:
IEEE Journal of Solid-State Circuits
影响因子:
5.4
作者:
[Thomas, Sidharth, Razavian, Sam, Sun, Wei, Motlagh, Benyamin Fallahi, Kim, Anthony D., Wu, Yu, Williams, Benjamin S., Babakhani, Aydin]
通讯作者:
Babakhani, Aydin
An Efficient 0.4 THz Radiator with 20.6 dBm EIRP and 0.2% DC-to-THz Efficiency in 90nm SiGe BiCMOS
An%20Efficient%200.4%20THz%20散热器%20with%2020.6%20dBm%20EIRP%20and%200.2%%20DC-to-THz%20Efficiency%20in%2090nm%20SiGe%20BiCMOS
DOI:
10.1109/rfic54547.2023.10186165
发表时间:
2023
期刊:
IEEE Radio Frequency Integrated Circuits Symposium (RFIC
影响因子:
--
作者:
[Thomas, Sidharth, Razavian, Sam, Babakhani, Aydin]
通讯作者:
Babakhani, Aydin
CAREER: Silicon-Based Electronic Arrays for Coherent Generation and Detection of Picosecond Pulses
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批准号:1830123
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项目类别:Standard Grant
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资助金额:$25.24万
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财政年份:2017
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负责人:Aydin Babakhani
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依托单位:
CAREER: Silicon-Based Electronic Arrays for Coherent Generation and Detection of Picosecond Pulses
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批准号:1554515
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项目类别:Standard Grant
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资助金额:$50.0万
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财政年份:2016
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负责人:Aydin Babakhani
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依托单位:
海外基金