A metal-oxide TFT technology platform for flexible RF communication systems - Phase 2 (10by10.com2)

在过去的几十年里，薄膜技术和器件取得了巨大的进步。然而，薄膜晶体管的可实现截止频率仍然相对较低，这对实现柔性射频电子提出了严峻的挑战。10by10.com的主要目标是将先进的金属氧化物薄膜技术与先进的射频电路设计方法相结合，实现无线通信系统高频柔性电子产品的技术突破。这一技术突破得益于FT通过持续的器件优化和扩展提高了十倍，并通过创新的谐波电路设计技术使速度提高了十倍，超过了器件的截止频率。作为第一阶段的结果，这种倍增(10x10)的性能已经达到，(I)在接收器组件级别上检测超出GHz屏障的信号，以及(Ii)在设备级别上达到高达324 MHz的FTS。第二阶段的目标是受益于我们在第一阶段取得的成就，以在发射机(大功率TFT)方面取得进展，并进一步改进设备技术和电路，以便在第6年年底实现超越GHz障碍的无线通信。

Thin-film technologies and devices have made a tremendous progress over the past decades. However, the achievable cutoff frequency of thin-film transistors remains comparatively small, which presents a severe challenge towards the realization of flexible RF electronics. The 10by10.com main objective is to combine advanced metal-oxide thin-film technologies with advanced RF circuit design methodologies to realize a technology breakthrough in high-frequency flexible electronics for wireless communication systems. This technological breakthrough is enabled by a ten-fold improvement of fT through continued device optimization and scaling and yet another ten-fold speed-enhancement through innovative harmonic circuit design techniques beyond the device cutoff frequency. As a result of phase one, this double ten-fold (10by10) performance has been reached, (i) at the level of receiver components detecting signals beyond the GHz-barrier, and (ii) on the device-level reaching fTs as high as 324MHz. The aim of the second phase is to benefit from our achievements in phase one to progress on transmitters (high-power TFTs) and to further improve the device technology and circuits to enable wireless communication beyond the GHz-barrier at the end of year 6.