Investigation of fundamental mechanisms of pore and network formation in mesoporous low-k dielectrics by combining spectroscopic techniques

多孔有机硅酸盐已被广泛应用于集成电路金属化的前沿技术超过10年。然而，在文献中，关于多孔结构的形成和变化仍然存在一些悬而未决的问题。本项目的目的是研究多孔低k介电材料在固化过程中的动力学和物理过程问题的基本公式。下列问题将随时间就地调查。-温度对交联和萃取孔隙有哪些具体影响？-毛孔和网络的随时间发展情况如何？-这两个过程之间是否存在相互干扰？-工艺压力如何影响交联和孔隙提取？-在UV固化过程中，较低的温度有用吗？-在固化过程中是否会发生材料损坏？-固化过程如何依赖于孔隙浓度？-不同的网材对固化过程有何影响？自旋的ULK电介质可以像CVD的ULK一样固化吗？目前在文献中没有差异。然而，这两种材料却截然不同。两种不同的光谱方法将用于研究超低k介电介质中多孔网络形成的基本动力学和物理过程。在开姆尼茨工业大学，网络的时间依赖性分析将在具有集成FTIR测量系统的实验固化室中进行研究。在亥姆霍兹罗森多夫中心，用正电子湮没光谱对孔系统进行了原位表征。两个可用的EPOS和赞助商来源（AIDA I和AIDA II）用于此目的。通过脉冲正电子源（EPOS），这是世界上独一无二的，深度相关的材料研究可以在固化过程中进行。与此相关，将确定机械和电气性能，以表示它们与孔隙和网络参数的联系，并将它们放入现有文献中。随着实验研究的结束，有限元模拟将支持这些结果。

Porous organosilicates have been widely used for the metallization of integrated circuits in leading edge technology for over 10 years. Nevertheless, in literature, there are still open questions concerning the formation and variation of the porous structure. The aim of this project is to investigate fundamental formulations of questions about the kinetic and physical processes in porous low-k dielectric material during the curing process. The following questions will be investigated time-depended and in situ.- Which impact has the temperature on cross-linking and porogen extraction in detail?- How is the time-depended development of pores and network?- Is there a mutual interference between these two processes?- How does the process pressure influence cross-linking and porogen extraction?- Are lower temperatures useful during UV curing?- Does material damage occur during the curing process?- How does the curing process depend on porogen concentration?- How do different network materials influence the curing process?- Can spin-on ULK dielectrics be cured the same way like CVD ULKs? There is currently no difference in the literature. However, both materials could not be more different.Two different spectroscopic methods will be used to study the fundamental kinetic and physical processes of porous network formation in ultra low-k dielectrics. At the Chemnitz University of Technology, the time-dependent analysis of the network will be investigated in an experimental curing chamber with an integrated FTIR measuring system. At the Helmholtz Zentrum Rossendorf the in-situ characterization of the pore system will be done by positron annihilation spectroscopy. The two available EPOS and SPONSOR sources (AIDA I and AIDA II) are used for this purpose. By means of the pulsed positron source (EPOS), which is unique worldwide, depth-dependent material investigations can be carried out during the curing process. Associated with this, the mechanical and electrical properties will be determined in order to represent their linkage to the pore and network parameters and to place them into existing literature. With the closing of the experimental investigations, FEM simulations will support the results.