Deveiopment of Room Temperature Deposition Process of Silicon Nitride Film by Low Frequency Plasma CVD.

硅腈薄膜被广泛地用于半导体技术中，用于中间层绝缘和设备表面被动。Stoichiome-Tric硅氮基Si_3n_4可以在900 ° C左右的温度沉积下沉积，并且接近Stoichimetric硅氮基薄膜可以在低基底温度（200-300 ° C）下沉积高频率等离子体CVD方法。目前研究的目的是利用低频（50赫兹）低频率（50赫兹）等离子体CVD与硅烷和硝基混合物的室内温度储存硅腈薄膜。结果可能达到以下程度：1）硅腈薄膜被沉积在低频（50赫兹）等离子体CVD在房间温度下使用氮素和硅烷混合物。沉积高质量硅腈，氮素和硅混合物中的硅片段小于5%.2）沉积硅腈薄膜的反射指数、断裂场的强度和抵抗力为2.0， 1.2 x10 ^1 V/cm和6x 10 ^<15>cm，对3）沉积在5英寸硅芯片上的薄膜厚度的分布为1000 &lt;+ minus&gt; 30<Ang>。4）固定电荷密度和Al/SiNx/SiO_2 /Si（MNOS）的表面状态密度约为1.5 x10 ^<11>cm^&lt;-2&gt;和8x 10^<10>cm^&lt;-2&gt; ev^&lt;-1&gt;。电影属性的基础温度依赖性是可见的，并且温度很高（&lt;200 ° c）是，电影就成了西蒂奇。所述电气性能没有改变.（5）发射.氮和硅等离子体中硅和氮中性和离子化分子的强度与低频率（50赫兹）相比较（13.56 MHz）等离子体.6）由于低频等离子体可以产生高电子能等离子体，因此需要良好的硅氧化反应，高质量的硅腈薄膜可以在没有任何辅助的情况下生长。

Silicon nitride films are being used extensively in the semiconductor technology for interlayer insulation and device surface passivation. Stoichiome-tric silicon nitrode Si_3n_4 can be deposited by thermal deposition at about 900 ゜C, and nearly stoichimetric silicon nitride films have been deposited by the high frequency plasma CVD method at low substrate temperature (200-300゜c). The purpose of the present study is to deposite of silicon nitride films at room temperature using low frequency(50Hz) plasma CVD with silane and nitrogen mixtures. The results obtained may be summarized as below.1) Silicon nitride films have been deposited by low frequency(50Hz) plasma CVD using a nitsogen and silane mixture at room temperature. To deposit high quality silicon nitride, the silane fraction in the nitrogen and silane mixture has to be less than 5%.2) The refractive index, breakdown field strenght and resistivity of the obtained silicon nitride film were 2.0, 1.2 x 1 0^1 V/cm and 6 x 1 0^<15> cm, respectively.3) The distribution of film thickness on 5 inches Si wafer was 1000 <plus-minus> 30 <Ang>. 4) Fixed charge density and surface state density of Al/SiNx/SiO_2 /Si(MNOS) were about 1.5 x 1 0^<11> cm^<-2> and 8 x 10^<10> cm^<-2> ev^<-1> , respectively. substrate temperature dependence of the film properties were observed, and as high the temperature(<200゜c) is, the films become Si tich. However electrical properties were not changed.5) The emission.intensity from silicon and nitrogen neutral and ionized molecule in nitrogen and silane mixture plasma with low frequency(50Hz) is large compared with that from RF(13.56MHz) plasma.6) Since low frequency plasma can generate high electron energy plasma, which is required for good silicon nitride formation, high quality silicon nitride films can be grown without any assistance from heating of the substrate.