Microtribological Properties of Singlecrystal Silicon and Silicondioxide Layr

随着微细加工技术的发展，单晶硅已被广泛应用于微机械等微器件中。本研究的目的是阐明单晶硅的微观摩擦学性能，并通过氧化硅表面涂层来改善其性能。首先用动态硬度计测定了单晶硅表面的显微硬度。在常规环境和超高温条件下测量了压痕载荷与压痕深度的关系。本实验所用的样品是（1，1，1）型单晶硅，表面覆盖一层二氧化硅。采用等离子体化学气相沉积法制备了厚度为988 nm的二氧化硅薄膜。温度从室温到800度变化。结果表明：（1）当表面涂覆二氧化硅时，动态硬度较小;（2）当压痕较小时，动态硬度较小;（3）动态硬度在300-400 ℃时达到最大值。

With the developement of micro fabrication, singlecrystal silicon has been used in many microelements such as micromachines. The aim of this research is to clarify the microtribological properties of synglecrystal siliconand to improve their characteristics by siliocondioxide over coat. First of all micro hardness of the surfce of singlecrystal silicon is measured by using a dynamic hardness tester. The relation between the indentation load and indentation depth is measured under the usual environment and under ultra high temperature. The specimen used in this experiment is singlecrystal silicon of (1,1,1) and with a ovre coat of silicondioxide. Thickness of silicondioxide is 988 nm wich is coated by plazma CVD method. Temperature is varied from room temperature to 800 deg. It is found that (1) dynamic hardness is small when the surface is coated by silicondioxide, (2) dynamic hardness is small when the indentation is small and (3) dynamic hardness becomes maximum at 300-400 deg (C).