Plasma Potential Diagnostics Using X-ray Spectra obtained with Semiconductor X-ray Detectors Developed by Our New Theory

提出了一种利用等离子体X射线谱诊断等离子体电势的新方法。特别是，新开发的半导体X射线探测器被利用;这些探测器最初是根据我们的新理论设计的半导体X射线响应。局部正静电等离子体电位具有等离子体电子捕获能力。被俘获的电子的最大能量又由电势的值决定，因为超过最大势能的电子加热使被俘获的电子不被俘获。对这种最大X射线能量的观测提供了对空间局域电子约束势的识别，实际上，用这种新方法和传统的势诊断法得到的势值的比较表明两者之间有很好的一致性。这种新方法还提供了一种新的势形成标度律。

A new method for plasma potential diagnostics using plasma X-ray spectra is developed. In particular, newly developed semiconductor X-ray detectors are utilized ; these detectors are originally designed using our new theory on semiconductor X-ray responses.Localized positive electrostatic plasma potentials have the capability of plasma electron trapping. The maximum energy of the potential trapped electrons is in turn determined from the value of the potential, since the electron heatings beyond the maximum potential energy make the trapped electrons untrapped. The observation of such a maximum X-ray energy provides the identification of the spatially localized electron confining potentials.In fact, the comparison of potential values using this new method and the conventional potential diagnostics shows good agreement between the two. This new method also provides a new scaling law of the potential formation.