Characterization and modeling of memory effects in switched GaN HEMT devices

GaN基晶体管在电力和微波电子中的应用越来越广泛，因为这种材料系统可以在更高的电压和电流下工作，并且比其他材料系统中的商业晶体管实现更短的开关时间。最新的是，用于这些非常不同任务的GaN HEMT在概念上具有相同的结构，因此在电路设计中也应该使用统一的模型来描述它们。同时，当开关转换器中的开关操作必须以与模拟电路中相同的高精度计算时，以及当模拟微波功率放大器越来越多地使用晶体管作为开关时，工作模式收敛。这种发展需要一种新的、统一的晶体管建模方法。针对GaN HEMT典型的记忆效应对开关转换器和放大器效率的影响，在为电路设计和物理模拟建立微波和功率晶体管模型的基础上，建立了一个统一的GaN HEMT模型，用于模拟开关放大器，从物理上解释了陷阱效应对开关行为的影响。

GaN-based transistors are increasingly used in power and microwave electronics, since this material system can operate at higher voltages and currents and achieve shorter switching times than commercial transistors in other material systems. What is new is that GaN HEMTs for these very different tasks have a conceptually identical structure, so that they should be described in the circuit design also by a uniform model. At the same time, the operating modes converge when the switching operations in switching converters have to be calculated with the same high accuracy as in analog circuits, and when analog microwave power amplifiers increasingly use the transistor as a switch. This development calls for a new, uniform approach to transistor modeling. The memory effects typical for GaN HEMTs pose a particular difficulty, as they significantly worsen the efficiency of switching converters and amplifiers.On the basis of solid preliminary work in the field of modelling microwave and power transistors for circuit design and physical simulation, this project aims to develop a uniform GaN HEMT model for the simulation of switched amplifiers, which can explain the influence of trapping effects on switching behavior based on physics.