Nanoimprint Lithography System

RWTH亚琛大学的IWE 1申请了纳米压痕光刻系统，以补充研究所的纳米制造设施，并申请一个目前正在扩大的共享洁净室(微和纳米技术中心实验室，CMNT)。我们目前能够使用邻近研究所的电子束光刻技术来制作纳米结构。然而，由于写入时间较长，用混合微纳米结构构建整个晶片是不现实的。在我们早期研究所的研究工作中，我们长期以来一直将纳米压印光刻作为快速生产纳米结构的晶片规模的关键技术。这一点仍然反映在目前的IWE 1项目中。为了与CMNT中的其他系统兼容，纳米压印光刻系统必须设计为8英寸晶片尺寸。该系统应该能够在结构上精确复制长达20 nm的纳米结构(紫外线纳米压痕)，还可以直接构建热固化聚合物和2D纳米材料/聚合物复合材料。这使得纳米技术也可以在CMNT的框架内和RWTH亚琛的Graphen&2D材料中心得到广泛应用。

The IWE 1 of RWTH Aachen University applies for a nanoimprint lithography system to complement the institute's nanofabrication facilities and for a shared clean room that is currently being expanded (Central Laboratory for Micro- and Nanotechnology, CMNT). We are currently able to use electron beam lithography from our neighboring institute for nanostructures. However, structuring entire wafers with mixed micro- and nanostructures is not practical due to the long writing times. In our research work at earlier institutes, we have long been using nanoimprint lithography as a key technology for the fast wafer-scale production of nanostructures. This is still reflected in the current IWE 1 projects. For compatibility with other systems in the CMNT, the nanoimprint lithography system must be designed for 8 inch wafer sizes. The system should enable a structurally accurate replication of nanostructures up to 20 nm (UV nanoimprint) and also enable the direct structuring of thermally curable polymers and 2D nanomaterial/polymer composites. This allows a broad use of nanotechnology also within the framework of the CMNT and in the Graphen & 2D Material Center of the RWTH Aachen.