Fabrication of Self Q-Switehed, Co-Doped Waveguide Laser by Use of PLD

1.对波导激光薄膜进行了改进。通过计算机模拟，从理论上确定了掺铬、钕共掺GGG波导激光器的最佳离子密度、晶体长度、输出耦合器。采用陶瓷靶材，制备了高质量的(110)取向的NdKGW薄膜。在(1102)蓝宝石衬底上生长高质量的NdKGW薄膜时，(1102)蓝宝石衬底优于(100)YAG衬底。确定了最佳生长条件为富K目标和生长温度为70 0℃。另外，后退火热处理提高了薄膜的结晶质量。利用干涉飞秒激光加工技术，成功地在用于泵浦的Nd：GGG薄膜上实现了光栅的形成。这个项目的报告已经起草好了。

1. Waveguide laser thin films have been improved.2. Optimum Nd and Cr ion density, crystal length, output coupler have theoretically been determined with computer simulation of Cr, Nd co-doped GGG waveguide lasers.3. With ceramic targets, high quality (110) oriented Nd:KGW thin films were fabricated. The substrate of(1102) sapphire is found to be better than (100) YAG substrate on which the high quality Nd:KGW thin films are grown. The K-enriched target and growth temperature of 700 ℃ were found optimum for the best growth conditions. In addition post-annealing improved the crystal quality of the fabricated films.4. Grating formation on the Nd:GGG thin film for pumping are successfully demonstrated with interferometric femtosecond laser processing.5. The report of this project has been drawn up.