Development of Semiconductor Detectors for Simultaneous Observations of Spatially Resolved Ion and Electron Temperatures and Beams

提出了用半导体探测器同时观测等离子体离子（Ti）和电子（Te）温度的设想。这一想法也在串联镜等离子体发射中得到了实验验证。这种方法是开发的基础上的替代“积极”使用的半导体“死层”作为能量分析过滤器。过滤依赖的电荷交换中性粒子从等离子体上的厚度薄（nm厚的顺序）的SiO2层用于分析Ti的范围从数百到数千eV。即使在这种粒子和x射线同时入射到半导体探测器的条件下，它们在半导体材料中的穿透长度和沉积深度的不同依赖性也使得有可能区分粒子（对于Ti）和x射线（对于Te）。在本研究中，对所提出的想法进行了原理验证等离子体实验，以验证通过在使用更薄的死层之前使用各种薄过滤材料来区分和识别Ti和Te的每个值的概念的可用性。

An idea of the use of semiconductor detectors for simultaneously observing both plasmaion (Ti) and electron (Te) temperatures is proposed. The idea is also experimentally verified in a tandem-mirror plasma shot. This method is developed on the basis of an alternative "positive" use of a semiconductor "dead layer" as an energy-analysis filter. Filtering dependence of charge exchange neutral particles from plasmas on the thickness of a thin (of the order of nm thick) SiO2 layer is employed for analyzing Ti in the range from hundreds to thousands eV. Even under the conditions of simultaneous incidence of such particles and x rays into semiconductor detectors, the different dependence on their penetration lengths and deposition depths in semiconductor materials makes it possible to distinguish particles (for Ti) from x rays (for Te). In this research, proof-of-principle plasma experiments for the proposed idea are carried out to verify the availability of this concept of distinguishing and identifying each value of Ti and Te by the use of various thin filtering materials prior to the use of thinner dead layers.