Functional Thin Film Formation with High Efficiency Microwave Plasma CVD

1)本研究的目的是在本实验室微波放电研究和开发的基础上，开发一种用于在PET瓶内表面形成抗穿透膜等功能薄膜的装置。2）利用波导内脊的电场增强表面波传播产生高密度等离子体。3）利用该装置，4）设计并建造了一套新的装置，该装置能产生适合于研究薄膜特性的平坦等离子体，以获得薄膜形成的最佳等离子体条件。微波功率通过空腔谐振器底部的缝隙天线并沿石英板表面沿着向等离子体馈送。该技术被证明可以在宽范围的放电条件下产生稳定的等离子体。5）另一种技术已经被开发来形成难以用等离子体化学气相沉积法产生的金属膜，该技术基于用高电流蒸发细导线产生的金属等离子体的电磁加速。6）建立了激光散射方法来研究等离子体中纳米颗粒的行为，通过使用氩离子激光，与纳米颗粒的薄膜形成以及与等离子体中纳米颗粒的检测相关。获得了等离子体化学气相沉积的相对灵敏度因子和溅射产额数据，这些数据对分析等离子体中的化学过程具有重要意义。7）该成膜装置的完成和相关诊断技术的建立，为等离子体化学气相沉积制备各种功能薄膜提供了理想的条件。

1) The purpose of this research is to develop a device for functional thin film formation such as penetration resistive film onto the inner surface of PET bottle, on the basis of research and development on microwave discharge at our laboratory.2) A high density plasma has been produced with surface wave propagation utilizing electric field enhancement with a ridge inside the waveguide.3) With this device, Ar plasma with CH_4 is used for carbon coating of PET bottle set at the end of the discharge tube.4) A new device has been designed and constructed, which can produce a flat plasma suited for studying the characteristics of the film in order to obtain the optimum plasma conditions for thin film formation. The microwave power is fed to the plasma through a slot antenna at the bottom of a cavity resonator and along the surface of a quartz plate. This technique is proved to produce stable plasma in a wide range of discharge conditions.5) Another technique has been developed to form a metal film which is difficult to produce with plasma chemical vapor deposition method, based on electromagnetic acceleration of metal plasma produced with vaporization of thin wire with a high electric current.6) A laser scattering method is established to study the behavior of nano-particles in a plasma, by the use of argon ion laser, related with thin film formation from nano-particles, and with detection of nano-particles in a plasma. The relative sensitivity factors and the sputtering yield data have been obtained which are important to analyze the chemical processes in the plasma.7) The completion of this thin film formation device and the establishment of related diagnostic technique allow us to obtain desirable conditions for various kinds of functional thin film formation with plasma CVD.