Study on hole-supplying method in cryogenic semiconductor radiation detector employing hole-acceptor excitation

在2001年，我们尝试通过在具有高硼浓度的硅晶片中的耗尽层将空穴推到具有低硼浓度的硅晶片上以将它们馈送到硼。我们在H-Si上制作了肖特基电极，并利用蒸镀的Au层将H-Si与L-Si粘合在一起。通过电阻率测量的检查，发现只有1/10至1/20的面积彼此附着。由于两个Si晶片的粘附困难，我们试图增加金属（M）-绝缘体（I）-Si（S）器件的绝缘体和Si界面处的空穴密度。在B浓度为10 μ g/cm ~ <14>2至10 μ g/<16>cm ~ 2<-3>的Si晶片的一侧上，在低温下扩散B以形成欧姆接触。在硅片的另一面制作了SiO_2层，并在其上制作了栅电极，在电容-电压测量中，除了由于俘获电荷引起的电压漂移外，获得了接近理想的特性，C-V测量结果在低至60 K下都得到了测量。然而，由于缺乏工作孔，在60 K以下没有观察到响应。我们计划用LED灯照射设备。

In 2001, we tried to push holes to a Si wafer with low Boron concentration to feed them to the Borons, by a depletion layer in Si wafer with high Boron concentration. We fabricated a Schottky electrode on H-Si, which was adhered to L-Si with a help of evaporated Au layer. With the examination by electric resistivity measurements, only 1/10 to 1/20 of the area was found attached each other.With the difficulties of adhering two Si wafers, we tried to increase hole density at the interface of the insulator and Si of metal (M)-insulator(I)-Si(S) device. On one side of Si wafers with B concentration of 10^<14> to 10^<16>cm^<-3>, B were diffused to make Ohmic contacts at low temperature. On the other side of the wafer, SiO2 layer was made and gate electrodes were fabricated on it. In capacitance-voltage measurement, nearly ideal characteristics was obtained except the shift in voltage due to captured charges, The results of C-V measurements were obtained down to 60K. No response, however, was observed below 60K, due to the lack of working holes. We are planning to irradiate the device by light with LED.