Basic study on the nano-contact formation at the metal/SiGe semiconductor Interface

超大规模集成系统中的MOS器件不断缩小，通过减少电子通过通道所需的时间而产生加速器件。此外，如果电子通过沟道的迁移率提高，我们可以获得更多的高性能器件。因此，具有高迁移率的半导体材料是应用于沟道的需求。应变Si和SiGe是具有比Si更高电子迁移率的这种材料的候选者。在使用这些材料的器件中，‘源极’和‘漏极’电极上需要低阻欧姆接触。作为发展小型化电极形成的基础技术，均匀的固相反应以获得低阻的纳米接触是必要的。因此，我们研究了Ni在Si上硅化和Ni在SiGe上硅化的均匀固相反应。结果表明，纳米Ni颗粒与Si之间的均匀反应导致NiSi相的形成非常稳定，这是由于在700℃下热处理30min所致。在SiGe衬底上，均匀的固相反应生成了与衬底成分几乎相同的均匀的NiSIGe。所得结果表明，我们的建议对于均匀的纳米接触的形成是有效的。结论结果将在今后的出版物中公布。

MOS devices in ultra-large-scaled integrated systems are continuously scaled-down, resulting in a speed-up device by decreasing the time required for electrons to pass through the channel. In addition to this, if the mobility of electrons passing through the channel is raised, we can obtain more high performance devices. Thus, semiconductor materials with high mobility are the demand for applying to the channel. Strained Si and SiGe are candidates of such materials having higher electron mobility than that of Si. In the devices using these materials, low resistive ohmic contacts are required on the 'source' and 'drain' electrodes. As the basic technology to develop the scaled-down electrode formation, uniform solid-phase reaction to obtain the low-resistive nano-contact is necessary. Thus, we examined the uniform solid-phase reaction of silicidation of Ni on Si and Ni on SiGe by applying Ni with nano-grains. The results revealed that uniform reaction between nano Ni grains and Si results In the formation of NISi phase well stable due to annealing at 700 ℃ for 30 min. On the SiGe substrate, uniform formation of NISIGe almost the same composition as that of substrate is formed by the uniform solid-phase reaction in this study. The obtained results reveals that our proposal is effective for the uniform nano-contact formation. The concluding results will presented in the publications in future.