Memristor-Based Sensors and Metrology

氢气传感器在汽车工业中具有很高的技术相关性。薄膜技术允许大规模生产低价格的传感器，使用既有的工艺，也用于微和纳米电子学。薄膜传感器的缺点，特别是用于传感氢的薄膜传感器，是漂移和降解效应，限制了在安全相关应用中的使用。本课题介绍了一种基于忆阻元件的新型传感器。忆阻元件的阻性状态可以在至少两个不同的电平（高阻和低阻状态）之间切换。最近的研究表明，电阻转变是基于纳米尺度上的复杂氧化还原现象，并且记忆元件受到环境的影响。“忆阻传感元件”（MSEs）将利用这些电化学相互作用，并将成为开发新型薄膜传感器的基石。这些装置提供了传感器功能可以记忆校准的潜力，漂移和退化效应可以通过重新编程方案来补偿。在这个项目中，mse将被制备和表征。先进的电学、光谱学和显微非原位和原位计量技术将用于研究基本的物理和电化学现象。物理化学模型将在这些结果的基础上进行修正和扩展。这些发现将最终用于制造和优化低成本、快速和可重复的氢传感记忆体传感器元件。

Hydrogen gas sensors have a high technological relevance for the automotive industries. Thin-film technology allows for mass-production of low-priced sensors using established processes that are also used in micro- and nanoelectronics. Disadvantages of thin-film sensors, in particular those for sensing hydrogen, are drift and degradation effects that limit the use in safety relevant applications. In this project, a novel sensor-type based on memristive elements is introduced. The resistive state of memristive elements can be switched between at least two different levels (high- and low-resistive state). It has been recently demonstrated that the resistance transition is based on complex redox phenomena on the nanoscale and that memristive elements are affected by the ambient. “Memristive sensing elements” (MSEs) will exploit these electrochemical interactions and will be the corner stones for development of novel thin-film sensors. These devices offer the potential that the sensor-functionality can be memristively calibrated, and drift- and degradation effects can be compensated by reprogramming schemes. In this project, MSEs will be fabricated and characterized. Advanced electrical, spectroscopic, and microscopic ex situ and in situ metrology techniques will be used to investigate fundamental physical and electrochemical phenomena. Physico-chemical models will be modified and extended based on these results. These findings will be eventually used for fabrication and optimization of low-cost, fast and reproducible memristive sensor elements for hydrogen sensing.