Nano-integration of Metal Nanodot Nonvolatile Memory

本研究采用砂法制备金属纳米点(MND)涂层。成功地制备了密度为1.3×10~(-13)/cm~2、小尺寸为~1.5 nm的钨纳米点。制作了具有MND浮栅和高k阻挡介质的存储晶体管。钴纳米点存储具有较长的保留时间、优异的耐久性和较大的存储窗口。成功地制作了一种新型的具有电势工程双层MND层的存储器，并进行了正确的操作。

In this research, SAND method was developed to form metal nanodot (MND) layer. The tungsten nanodots with high density of 1.3x10^<13>/cm^2 and small size of ~1.5nm was successfully formed. The memory transistors with MND floating gate and high-k blocking dielectric were also fabricated. The cobalt nanodots memory shows a long retention time, excellent endurance, and large memory window. A novel memory with potential-engineered dual MND layers was successfully fabricated and operated properly.