MBE-Sputtering-system for antiferromagnetic spintronic materials

许多自旋电子效应，如用于新型磁性器件如磁性随机存取存储器（RAM）或磁性硬盘的巨磁电阻和隧道磁电阻（GMR，TMR），已经在使用先进的薄膜沉积技术精确设计成具有良好定义的尖锐界面和高结晶质量的薄膜系统中被发现。从复杂的材料系统中实现这种外延薄膜通常会导致自旋电子效应的惊人发现，这些效应允许仅以低功耗进行非常快速的操作。因此，涉及从各种材料系统（包括（半）金属、氧化物化合物、半导体和超导体）沉积薄膜的最先进的制备技术已经成为自旋电子学研究的焦点。近年来，自旋电子学研究取得了突破，揭示了使用反铁磁体（AF）代替铁磁体实现更强大的自旋电子功能的可能性。在以前的磁性器件中，AF仅用作辅助组件，因为AF的固有特性，例如可忽略的磁化强度，不允许在中等磁场下操纵反铁磁序。然而，它已被证明，AF的内在对称性允许非常快速的操纵磁序，并可能导致新的自旋电子效应。特别是，晶体和磁晶格的组合对称性在实现诸如没有净磁化的AF中的自旋极化带、异常和自旋霍尔效应以及G（T）MR效应等现象中起着至关重要的作用。最近，在具有特定晶体和磁晶格对称性的外延薄膜中，已经证明了反铁磁顺序的超快电开关和明显相同的反铁磁状态的检测。因此，外延薄膜的实现是在AF中的新的自旋现象的研究的一个基本要素。为了实现AF的外延薄膜，我们申请了由多靶溅射和分子束外延（MBE）系统组成的集群。为了覆盖广泛的材料系统，我们的目标是实现一个生长设施，包括一个具有8个靶的UHV溅射系统，一个氧化物室和一个配备有多个泻流单元和一个电子束蒸发器的MBE系统，该系统通过一个共同的传输管连接，允许超高真空条件下不同室之间的无缝样品交换。

Many spintronic effects, such as gaint and tunnel magnetoresistance (GMR, TMR) used in novel magnetic devices such as magnetic random access memories (RAMs) or magnetic hard disks, have been discovered in thin film systems precisely designed to have well-defined sharp interfaces and high crystalline quality using advanced film deposition techniques. The realization of such epitaxial thin films from complex material systems has often led to breathtaking discoveries of spintronic effects that allow very fast operation with only low power consumption. As a result, preparation techniques involving state-of-the-art deposition of thin films from a variety of material systems, including (semi)metals, oxide compounds, semiconductors, and superconductors, have become the focus of the spintronics research. In recent years, there has been a breakthrough in spintronics research that has revealed the possibility of using antiferromagnets (AFs) instead of ferromagnets to enable far more powerful spintronic functions. In previous magnetic devices, AFs were used only as auxiliary components because the intrinsic properties of AFs, such as negligible magnetic magnetization, do not allow manipulation of the antiferromagnetic order with moderate magnetic fields. However, it has been shown that the intrinsic symmetry properties of AFs allow extremely fast manipulation of the magnetic order and can lead to novel spintronic effects. In particular, the combined symmetries of crystal and magnetic lattices play an essential role in enabling phenomena such as spin-polarized bands in AFs without net-magnetization, the anomalous and spin Hall effects, and also G(T)MR effects. Recently, ultrafast electrical switching of antiferromagnetic order and detection of apparently identical inverted antiferromagnetic states have been demonstrated in epitaxial thin films with specific crystal and magnetic lattice symmetries. The realization of epitaxial thin films is therefore an essential element in the research of novel spin phenomena in AFs. To realize epitaxial thin films of AFs, we apply for a cluster consisting of multitarget sputtering and molecular beam epitaxy (MBE) systems. In order to cover a wide range of material systems, we aim to realize a growth facility comprising a UHV sputtering system with 8 targets, a chamber for oxides and an MBE system equipped with multiple effusion cells and an e-beam evaporator connected by a common transfer tube that allows seamless sample exchange between the different chambers within ultra-high vacuum conditions.