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Reactive co-sputtering thin film deposition system

反应共溅射薄膜沉积系统

基本信息

批准号：
419194575
负责人：
金额：
--
依托单位：
Technische Universität München (TUM)
依托单位国家：
德国
项目类别：
Major Research Instrumentation
财政年份：
2018
资助国家：
德国
起止时间：
2017-12-31 至无数据
项目状态：
未结题

来源：
https://gepris.dfg.de/gepris/projekt/419194575?language=en
关键词：
Reactive co sputtering thin film

项目摘要

Funding is requested for a reactive co-sputtering system for deposition of semiconductor thin films and heterostructures with controlled composition, phase, and structure. The system will be installed at the Walter Schottky Institute, Technical University of Munich (TUM), and will complement existing deposition capabilities, which do not currently include reactive co-sputtering. The system will be a key tool in the Pl's research dedicated to the development of oxide, nitride, and oxynitride-based materials with application for conversion of sunlight into renewable fuels. The PI is a new faculty member at TUM and envisions the submission of multiple new research proposals enabled by this capability. Initial research projects will include the following : i) deposition of oriented and/or heteroepitaxial transition metal oxide semiconductor photoelectrodes as model systems that will be used for studies of carrier transport, (photo)corrosion, and recombination mechanisms, ii) deposition of perovskite oxynitride semiconductors with near optimal bandgaps for solar energy harvesting, and iii) deposition and development of novel p-type semiconductor photocathodes based on Cu-based nitrides for solar fuel formation. The PI has extensive experience with the reactive co-sputtering deposition technique, which has been specifically chosen to provide unique control over composition, phase, and structure, while also providing versatility to explore new materials with comparatively moderate time and resource investments.

需要为反应共溅射系统提供资金，用于沉积成分、相和结构可控的半导体薄膜和异质结构。该系统将安装在慕尼黑工业大学沃尔特·肖特基研究所(TUM)，并将补充现有的沉积能力，目前不包括反应共溅射。该系统将是PL致力于开发氧化物、氮化物和氮氧化物为基础的材料，并将阳光转化为可再生燃料的研究中的关键工具。PI是TUM的一名新教员，他设想通过这一能力提交多个新的研究提案。初步的研究项目将包括：i)沉积定向和/或异质外延过渡金属氧化物半导体光电电极作为模型系统，用于研究载流子输运、(光)腐蚀和复合机理；ii)沉积具有接近最佳禁带的钙钛矿型氮氧化物半导体用于太阳能收集；以及iii)沉积和开发基于铜基氮化物的新型太阳能燃料形成的p型半导体光电阴极。PI在反应共溅射沉积技术方面拥有丰富的经验，该技术被特别选择为提供对成分、物相和结构的独特控制，同时还提供了以相对适中的时间和资源投资探索新材料的多功能性。