Study on Integratable Si Magnetic Sensor with Three Terminals.

研制了一种高灵敏度硅磁传感器，它的三个端子由两个二极管(主二极管和辅助二极管)组成，并在高阻硅衬底上共用一个N区。这种磁敏传感器工作在两个二极管的双注入状态，可以看作是一种有源磁阻器件。电流-电压曲线(&lt；I_1&gt；-&lt；V_1&gt；曲线)可以分为&lt；I_1&gt；&lt；比例&gt；&lt；V^2_1&gt；&lt；比例&gt；&lt；V^5_1&gt；和&lt；I_1&gt；&lt；比例&gt；&lt；V^3_1&gt；按照偏置电压&lt；V_1&gt；的大小的顺序。双注入的阈值电压符合Lampert和Rose的理论。传感器在1KGauss时的灵敏度在L=100时约为0.3%，在L=200时约为2.0%，其中R_0&gt；R_0&gt；是主二极管在磁场作用下的电阻变化率，L是&lt；P_1&gt；和N.3。该传感器的功耗接近辅助二极管的功耗，小于15 mW。

A high-sensitive Si magnetic sensor with three terminals composed of two <p^+> i <n^+> diodes ( <P_1> iN main diode and <P_2> iN auxiliary diode) with a common <n^+> -region N fabricated on a high-resisitivity Si substrate (i-substrate) is developed. This magnetic sensor is operated in double-injection states of both two <p^+> i <n^+> diodes and may be regarded as an active magnetoresistance device.We could find following results.1. Current-voltage curve ( <I_1> - <V_1> curve) can be divided into three regions of <I_1> <proportion> <V^2_1> <I_1> <proportion> <V^5_1> , and <I_1> <proportion> <V^3_1> in order of the magnitude of the bias-voltage <V_1> . The threshold voltage of the double injection agrees with the Lampert and Rose's theory.2. Sensitivity of the Sensor, <DELTA> R/ <R_0> at 1Kgauss is about 0.3 at L=100 <micro> m, and <DELTA> R/ <R_0> is about 2.0 at L=200 <micro> m , where <DELTA> R/ <R_0> is the ratio of resistance change of the main diode due to the magnetic field and L is the distance between <P_1> and N.3. The power consumption of the sensor is nearly equal to that of the auxiliary diode, and is less than 15mW.