Study of Photo and Electron-Beam Induced Phenomenons inAmorphous Chalcogenide Semiconductors Containing a large quantity of Ag

含有大量Ag的非晶态硫族化合物半导体表现出以下特殊现象。(1)通过照明在半导体上沉积金属银颗粒（光诱导金属表面沉积：PSD）。(2)电子束辐照引起的半导体结构变化。(3)光伏效应。(4)显著的温度依赖性的交流。传导这些现象与半导体中Ag^+离子的行为密切相关。本计画包括两个研究：（a）将其应用于光学与电子束记忆元件或高灵敏度温度侦测器之研究;（B）利用X光绕射与X光电子能谱分析半导体之结构。进行了以下研究。(a-1)用（Ge_<0.3>S_<0.7>）_<100-x>Ag_x + y·Au薄膜研究了PSD现象。从透射率、扫描电镜（SEM）图像等方面评价了银粒子的PSD灵敏度、图像分辨力和形状，并详细研究了这些性能与Au（y）含量的关系。(a-2)用显微分光光度计、电子探针、X射线衍射等方法研究了该薄膜的电子束诱导结构变化。提出了一个模型的电子束诱导的结构变化的机制。(a-3)本文研究了As-S-Ag和Ge-S-Ag系统玻璃（电极：Au、Pt、Cr等）的光伏效应。(a-4)在室温和77 K下研究了这些玻璃的频变导纳和电容。(b-1)根据Ge、S、Ag谱线的XPS谱和薄膜及热致结晶的X射线衍射图对薄膜的结构进行了分析。

Amorphous chalcogenide semiconductors containing a large quantity of Ag showthe following peculiar phenomenons. (1) Deposition of metallic silver particleon the semiconductor by illumination (photo-induced metal surface deposition: PSD). (2) Structural change in the semiconductor caused by electron beam irradiation. (3) Photovoltaic effect. (4) Remarkable temperature dependence of a.c. conduction. These phenomena are closely related to the behaviour of Ag^+ ions in the semiconductor. This project includes two reseaches: (a) the research with the objective to apply it to optical and electron-beam memory devices or high sensitive temperature detector; (b) the structural analysis of the semiconductor by X-ray diffraction and X-ray photo-emission spectroscopy. The following studies were performed. (a-1) The PSD phenomenon was studied using the film of (Ge_<0.3>S_<0.7>)_<100-x>Ag_x + y.Au in composition. The PSD sensitivity, resolving power of image and shape of deposited Ag particle were evaluated from the optical transmission property, SEM image, etc. The relations between these properties and the amount of Au(y) were investigated in detail. (a-2) The electron beam-induced structural change was studied by micro-spectrophotometer, EPMA, X-ray diffraction, etc, using the film mentioned above. A model was proposed for the mechanism of the electron beam-induced structural change. (a-3) The photovoltaic effect of glasses in the system of As-S-Ag and Ge-S-Ag (electrode: Au,Pt,Cr,etc) was studied. (a-4) Frequency-dependent admittance and capasitance of these glasses were studied at room temperature and 77K. (b-1) The structural analyses of the films were carried out on the basis of XPS spectra of Ge, S, Ag lines and X-ray diffraction patterns of the films and thermally-induced crystallines.