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Deposition of Narrow Bandgap Amorphous Semiconductor for High Efficiendy Solar Cells

用于高效太阳能电池的窄带隙非晶半导体的沉积

基本信息

批准号：
03650263
负责人：
AOKI Takeshi
金额：
$ 1.15万
依托单位：
Tokyo Institute of Polytechnics
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

During 1991-1992 academic years, the following results are obtained from the research on deposition of high-qualty a-Ge : H by ECR plasma.1.Irradiation of atomic hydrogen together with adequate ion flux on growth surface in ECR PCVD with a low flow rate of germane improves optoelectronic properties of a-Ge : H.Any increase in atomic hydrogen irradiation does not cause microcrystallization of the films. The effect is attributable to hydrogen etching from decrease in growth rate.2. Electron-irradiation onto the growth of films promotes an amorphous to microcrystalline phase transition. The transition is enhanced by electron-induced Ge etching. A moderate electron-irradiation together with ion-irradiation significantly improves optoelectronic properties of a-Ge : H films.3. Microcrystallization in the three different conditions of silane PCVD ; high gydrogen-dilution, high power and positively biasing is also observed in ECR PCVD of a-Ge : H and attributed to the electron-induced microcrystallization.4.Film quality of a-Ge : H produced by ECR PCVD depends on FWHM of frequency spectrum of microwave power source. A decrease in the FWHM by 1/30 increases optoelectronic properties by two and also improves photoluminesence properties.5.CPM characterization developed for a-Ge : H films gives defects density of order of 10^<16>/cm^3 in a-Ge : H, being comparable to that of device-quality a-Si : H.6.Further investigation should be made to clarify the presence of Staebler-Wronski effect in these high-quality a-Ge : H films.

1991-1992学年，我们对ECR等离子体淀积高质量a-Ge：H薄膜进行了研究，取得了以下结果：1.在低锗烷流量的ECR PCVD中，原子氢和适当的离子流对生长表面进行辐照，可以改善a-Ge：H薄膜的光电性能，原子氢辐照的增加不会引起薄膜的微晶化。这种影响是由于生长速率降低引起的氢腐蚀.电子辐照到薄膜的生长促进了非晶到微晶的相变。通过电子诱导Ge蚀刻增强了该转变。适度的电子辐照和离子辐照共同作用显著提高了a-Ge：H薄膜的光电性能.在硅烷等离子体化学气相沉积的三种不同条件下均观察到微晶化现象;在a-Ge：H的ECR等离子体化学气相沉积中也观察到高氢气稀释度、高功率和正偏置，并归因于电子诱导微晶化。4.通过ECR等离子体化学气相沉积制备的a-Ge：H薄膜质量取决于微波功率源频谱的半高宽。半高宽降低1/30，光电性能提高2倍，光致发光性能也得到改善。5.对a-Ge：H薄膜进行CPM表征，得到a-Ge：H中的缺陷密度为10^<16>/cm ^3量级，与器件级a-Si：H相当。H电影。