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Deposition of Narrow Bandgap Amorphous Semiconductor for High Efficiendy Solar Cells

用于高效太阳能电池的窄带隙非晶半导体的沉积

基本信息

批准号：
03650263
负责人：
AOKI Takeshi
金额：
$ 1.15万
依托单位：
Tokyo Institute of Polytechnics
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

During 1991-1992 academic years, the following results are obtained from the research on deposition of high-qualty a-Ge : H by ECR plasma.1.Irradiation of atomic hydrogen together with adequate ion flux on growth surface in ECR PCVD with a low flow rate of germane improves optoelectronic properties of a-Ge : H.Any increase in atomic hydrogen irradiation does not cause microcrystallization of the films. The effect is attributable to hydrogen etching from decrease in growth rate.2. Electron-irradiation onto the growth of films promotes an amorphous to microcrystalline phase transition. The transition is enhanced by electron-induced Ge etching. A moderate electron-irradiation together with ion-irradiation significantly improves optoelectronic properties of a-Ge : H films.3. Microcrystallization in the three different conditions of silane PCVD ; high gydrogen-dilution, high power and positively biasing is also observed in ECR PCVD of a-Ge : H and attributed to the electron-induced microcrystallization.4.Film quality of a-Ge : H produced by ECR PCVD depends on FWHM of frequency spectrum of microwave power source. A decrease in the FWHM by 1/30 increases optoelectronic properties by two and also improves photoluminesence properties.5.CPM characterization developed for a-Ge : H films gives defects density of order of 10^<16>/cm^3 in a-Ge : H, being comparable to that of device-quality a-Si : H.6.Further investigation should be made to clarify the presence of Staebler-Wronski effect in these high-quality a-Ge : H films.

1991-1992学年，通过ECR等离子体沉积高质量a-Ge : H的研究取得了以下成果： 1.在低流量锗烷的ECR PCVD中，原子氢辐照与生长表面足够的离子通量一起改善了a-Ge : H的光电性能。原子氢辐照的任何增加都不会导致a-Ge : H的微晶化。电影。该效应归因于生长速率降低造成的氢蚀刻。2．对薄膜生长的电子辐照促进非晶态到微晶态的相变。电子诱导的Ge蚀刻增强了转变。适度的电子辐照和离子辐照显着改善了a-Ge:H薄膜的光电性能。 3．硅烷PCVD三种不同条件下的微晶化；在a-Ge : H的ECR PCVD中也观察到高氢稀释、高功率和正偏压，这归因于电子诱导微晶化。4.ECR PCVD产生的a-Ge : H薄膜质量取决于微波电源频谱的半高宽。 FWHM 降低 1/30 可使光电性能提高两倍，并提高光致发光性能。5.针对 a-Ge : H 薄膜开发的 CPM 表征给出 a-Ge : H 中缺陷密度为 10^<16>/cm^3 量级，与器件质量的 a-Si : H 相当。6.应进行进一步研究以澄清 Staebler-Wronski 的存在这些高质量 a-Ge : H 薄膜中的效果。