ELECTRONIC PHYSIC ON A METAL-SEMICONDUCTOR INTERFACE

金属硅Schottky接触是由使用各种金属来调查典型二极管参数的依赖性，例如屏障高度和有效的理查森常数，在金属电极的电影厚度上。在任何与一部金属电电影400<Ang>厚以下的接触中，肖特基屏障的高度明显不同的电影厚度。有效的Richardson常数被一种光电测量显示出不同的价值观，依赖于金属的选择，也显示出金属厚度的依赖性，与金属半导体接触的一般接受理论相比。在特定的，有效的理查森常数是在一个样品中由rf Sputtering展示了一个非常大的电影--厚度的依赖性大于它在真空蒸发的样品中。更进一步，为了在有效的理查森常数下调查变化的原因在金属电影厚度下的目的，a1000-<Ang>-厚Pt电影已经被沉积在射频干扰上的硅材料中，其中在房间温度和500 ° C之间的各种温度被加热到各种温度。“屏障的高度和有效的理查森常数，这些Pt-Si接触者已经被调查了。”作为一个结果，它已经找到了障碍高度的依赖性和理查森常数对一个硅基质温度的厚度的敏感性的Pt电影很明确的同意。

Metal-Si Schottky contacts have been made by using various metals in order to investigate the dependence of typical diode parameters, such as the barrier height and the effective Richardson constant, on a film thickness of the metal electrode. In any contact with a metal-electrode film below 400 <Ang> thickness, the Schottky barrier height evidently varies with the film thickness. The effective Richardson constant obtained by a photoelectrical measurement shows different values, depending upon the choice of metal, and also shows a metal-thickness dependence, contrary to the generally accepted theory for metal-semiconductor contacts. In particular, the effective Richardson constant in a sample made by rf sputtering shows a much larger film-thickness dependence than that in a sample by vacuum evaporation. Furthermore, for the purpose of investigating the cause of the change in the effective Richardson constant with the metal-film thickness, a 1000-<Ang>-thick Pt film has been deposited by rf sputtering onto Si substrates which have been heated to various temperatures between room temperature and 500゜C. The barrier height and the effective Richardson constant for these Pt-Si contacts have been investigated photoelectrically. As a result, it has been found that the dependences of the barrier height and the Richardson constant on the thickness of a sputtered Pt film quite agree with the dependences of those on the temperature of a Si substrate.