Fabrication of High-Power Blue Emission Diveces Using Chemical Vapor Deposition Diamond

采用磁激活等离子体化学气相沉积系统（ECR等离子体CVD系统）和常规等离子体CVD系统制备了高质量的金刚石薄膜。用阴极发光（CL）研究了CVD金刚石膜的发射中心、发射机制，并观察到了与晶体完整性、杂质和缺陷（如空位和位错）有关的各种CL。未掺杂的CVD金刚石的化学发光光谱在蓝区（2.8-2.9eV）有一个发射峰，与天然Ⅱ a金刚石的发射峰相同。从4- 5 μ m的颗粒中观察到与天然IIb金刚石相当的自由激子复合辐射。这表明通过等离子体CVD形成的CVD金刚石具有极高的结晶度和纯度。在掺硼CVD金刚石中，观察到了由受主引起的束缚激子的复合辐射 ...更多信息 DS.发光强度随着金刚石中硼含量的增加而增加。在高能电子或热中子辐照和随后的退火之后，色心的发射是突出的。在未掺杂的CVD金刚石中观察到明显的起源于本征缺陷的5 RL中心（4.58eV处的零声子线）。在掺氮金刚石中，由于氮空位复合物，在电子辐照后的退火后出现了3.19eV中心。在CL成像中，本征发光（如自由激子复合辐射）位于[100]扇区，非本征发光（如2.16eV中心）位于[111]扇区。本研究对CVD金刚石的光学特性有了深入的了解，并为CVD金刚石的电致发光器件的研究提供了一条很好的途径。

High quality diamond films have been fabricated by employing a magneto-activated plasma chemical vapor deposition system (ECR Plasma CVD system) and a conventional plasma CVD system. Studies on emission centers, emission mechanism of the CVD diamond films, which are undoped, B- or N-doped, irradiated by electron or neutron, annealed, have been carried out using cathodolumionescence (CL).A variety of CL depending on crystal perfection, impurities and defects such as vacancies and interstials have been observed. Undoped CVD diamond has an emission peak at blue region (2.8-2.9eV) in its CL spectra, the same as that obtained from natural IIa diamond. From the particles of 4-5mum in size, the free exciton recombination radiation equivalent to that of natural IIb diamond has been observed. It indicates extremely high crystallinity and purity of CVD diamonds formed by plasma CVD. The recombination radiation of bound excitons due to nuetral acceptors has been observed in boron-doped CVD diamon … More ds. The luminescence intensity increases as the amount of boron in diamonds increases. The emissions from color centers are prominent after the high-energy electron or thermal neutron irradiation and subsequent annealing. The 5RL center (the zero-phonon line at 4.58eV) originated from intrinsic defects has been observed prominently in undoped CVD diamonds. In nitrogen-doped diamonds, the 3.19eV center due to nitrogen-vacancy complex has appeared after the annealing subsequent to the electron irradiation. Moreover, from the CL imaging, the intrinsic luminescence such as free exciton recombination radiation is found to be located in [100] sectors and the extrinsic luminescence such as the 2.16eV center is located in [111] sectors.In this work, an electro-luminescence has been observed, for the first time, from a Schottky diode formed by p-type diamond and Al structure. A well understanding on optical behavior of CVD diamond and a great approach to electro-luminscence devices using of CVD diamond have been contributed in this study Less