Research on Ultramicrocrystalline Si : H Binary Compound

采用氢等离子体化学溅射（HPCS）工艺制备了超微晶Si: H二元化合物半导体。该过程在纯氢气的射频磁控溅射系统中进行。通过氢等离子体与靶材的化学反应、靶材表面氢化分子的蒸发、氢等离子体中氢化分子的分解、沉积在基体表面等过程生长薄膜。通过调整溅射功率和选择衬底材料，获得了平均粒径小至1nm的最终Si: H颗粒。利用掺杂后的靶材，采用HPCS工艺将Sb和P掺杂到薄膜中。用HPCS制备了高质量的II-VI化合物半导体薄膜（ZnS, CdS, CdTe, SrS）。在20^ C的温度下在玻璃衬底上生长了多孔ZnS薄膜，在200^ C的温度下在（100）GaAs上生长了外延薄膜。将Mn元素掺杂到ZnS薄膜中，使我们能够制作电致发光器件。

Ultramicrocrystalline Si : H binary compound semiconductor has been prepared by the hydrogen plasma chemical sputtering (HPCS) process. The process was carried out in an rf magnetron sputtering system with pure hydrogen gas. The films were grown through the process such as the chemical reactions between the hydrogen plasma and the Si target, hydrogenated molecules evaporation from the target surface, decomposition of the hydrogenated molecules in the hydrogen plasma, and the deposition onto the surface the substrates. The ultimate small Si : H particles with the average grain size as small as 1nm was obtained by adjusting the sputtering power and choosing the substrate materials. Sb and P doping into the films was achieved by the HPCS process using the doped targets.High quality II-VI compound semiconductor (ZnS, CdS, CdTe, SrS) films were also obtained by the HPCS. The porycrystalline ZnS films were grown onto the glass substrates at 20^ﾟC and the epitaxial ones were grown onto (100) GaAs at 200^ﾟC. A Mn element doping was realized into the ZnS films, which enable us to fabricate an electroluminescent device.