Development of Preparation Methods of SXM Tips with a Ultra-fine Probing Area

扫描X显微镜（Scanning X microscope，SXM）是一种能在原子尺度上描绘样品表面形貌的扫描显微镜。当用针尖扫描表面时，通过保持物理量恒定，在SXM操作模式中针尖-样品距离保持恒定，该物理量在针尖顶点和样品表面之间互换，并且强烈地依赖于针尖-样品距离。因此，从扫描尖端跟踪处理的SXM图像显示具有原子分辨率的表面结构。扫描隧道显微镜（STM）是SXM系列的代表，其利用在尖端顶点和样品表面之间通过的隧道电流。由于隧穿电流对针尖-样品距离极其敏感，因此即使该距离变化小至0.1 μ A，电流也会显著变化，并且可以通过用扫描探针扫描样品表面来获得原子分辨的表面图像。 ...更多信息 在恒定的隧穿电流下的原子尖锐尖端。除了STM，扫描隧道光谱（STS），原子力显微镜（AFM），和其他扫描显微镜已开发和先进的短时间内。STS可以从隧道电流-偏压特性获得原子级分辨率的表面态密度，AFM可以利用针尖与样品之间的作用力来描述表面形貌，但SXM图像的分辨率和可靠性强烈依赖于针尖的清晰度和原子结构的稳定性。因此，迫切需要发展可靠的方法来制备和评价SXM尖端是必不可少的。本研究利用超高真空STM/STS和原子探针场离子显微镜结合场发射电子能谱（A-P STM/FEES），研究了真空和电沉积技术制备的SXM针尖的特性和可用性。用A-P场发射/场发射谱研究了电化学腐蚀后镀Ge的Ir针尖的原子和电子结构，得到了Ge沉积引起的表面态和能隙变化的信息.从实验中可以估计出Ge原子吸附在扫描针尖上的影响。导电聚合物的表面和电子结构也进行了研究，通过UHV-SnVSTS。此外，尖端覆盖。与导电聚合物的电子状态的详细结构的研究。少

Scanning X microscope (SXM) is a generic term various scanning microscopes which can depict the topography of sample surfaces in atomic scale by tracing the surfaces with atomically sharpened tips. While scanning the surface with the tip, a tip-sample distance is maintained constant in the SXM operation mode by keeping a physical quantity constant, which is interchanged between the tip apex and the sample surface, and strongly depends on the tip-sample distance. Thus the SXM images processed from the scanning tip tracing show the surface structures with the atomic resolution. A scanning tunneling microscope (STM) is a representative of the SXM family, which utilizes the tunneling current passing between the tip apex and the sample surface. Since the tunneling current is extremely sensitive to the tip-sample distance, even if the distance changes as small as 0.1, A, the current changes remarkably, and the atom-resolved surface images can be obtained by scanning the sample surface with a … More n atomically sharpened tip at a constant tunneling current. In addition to the STM, scanning tunneling spectroscopy (STS), an atomic force microscope (AFM), and the other scanning microscopes have been developed and advanced in a short duration. By the STS the surface state density can be imaged in the atomic resolution from the tunneling current-bias voltage characteristics, and the AFM can depict the surface topography utilizing the force exerted between the tip and the sample.However, the resolution and the reliability of the SXM images depend strongly on the tip sharpness and the stability of the atomic structure. Thus the urgent development of reliable methods to prepare and evaluate SXM tips is indispensable. In this study, using the UHV-STM/STS and the atom-probe field ion microscope combined with a field emission electron spectroscopy (A-P FIM/FEES), the characteristics and availability of the SXM tips prepared by vacuum-and electro-deposition techniques were investigated. The atomic and electronic structures of electrochemically etched Ir tips covered with Ge were studied by the A-P FIM/FEES to get information on changes in the surface states and semiconductive energy gap induced by the deposited Ge. The effects of Ge atoms adsorbed on the scanning tips can be estimated from this experiment. The surface and electronic structures of a conductive polymer were also investigated by the UHV-SnVSTS. Furthermore, the tip covered. with the conductive polymer was developed to study the detailed structures of the electronic-states of the polymer. Less