New Synthesis of TiC Films by Applying High Pressure and Electric Field to (Ti/Polyethylene) Film

本文研究了在合金工具钢基体上真空沉积Ti和聚乙烯（PE）薄膜，在高压和电场作用下合成TiC薄膜的新方法。在高压（0.392-9.8）条件下合成的样品表面，二次离子质谱分析发现有TiC^+离子存在/** 10^5N和高电场（3.75-7.5）× 10^7V/m。当C ^+离子从表面溅射到衬底时，这些离子的浓度增加，而C^+离子的浓度减少。这些结果表明在合成的薄膜中存在TiC化合物。此外，还观察到了较强的TiC_2H^+离子和较弱的TiC_2二聚体离子，表明合成的薄膜中含有TiC的非晶态。而在2.94 × 10^5N和Ti膜侧负偏压下合成后在600 ℃热处理2d的样品中检测到TiC（III）衍射峰，在2.94*10^5N和-1000 ° C下合成的样品的静摩擦系数的测量表明，在2.94*10^5N和-1000 ° C下合成的样品的表面非常平坦。在Ti膜一侧施加偏压，磨损的一个原因是该样品也具有良好的耐磨性能。

The new synthesis of TiC film has been studied by applying high pressure and electric field to the vacuum deposited (Ti and polyethylene (PE) ) films on the alloy tool steel as a substrate. TiC^+ ions were found by secondary ion mass spectroscopy on the surfaces of the samples synthesized under the condition of high pressure (0.392-9.8)/**10^5N and high electric field (3.75-7.5)*10^7V/m. These increased with sputtering of Xe^+ ion going from the surface to the substrate, while C^+ ions decreased. These results suggest the existence of TiC compound in synthesized films. Furthermore the strong TiC_2H^+ ions and the weak dimer ions of TiC_2 were also observed, which suggest that the synthesized films include the amorphous states of TiC.X ray diffraction showed hardly any peak of TiC in the films as synthesized. However the diffraction peak of TiC (lll) was detected in the sample thermal treated at 600ﾟC for 2days after synthesizing under 2.94*10^5N and minus-bias on Ti film side, and ones thermal treated at 780ﾟC for 4 days.Furthermore the measurement of the coefficient of static friction showed that the surface was very flat in the sample synthesized under 2.94*10^5N and minus-bias on Ti film side, and one of wearing did that this sample had also the good property of wearig.