Development and Fabrication of New X-ray Detectors on the basis of Our New Theory on the X-ray Response of Semiconductor Detectors

结果表明，半导体探测器的X射线能量响应对探测器参数的依赖关系可以用我们的新理论来解释，该理论的特征在于X射线产生的电荷对输出信号的三维扩散效应，这一发现显著地修正了由教科书中的传统理论和最近的MIT理论推导出的等离子体-电子温度Te的估计值.我们的理论被推广到分析多通道半导体阵列数据，这些结果被成功地应用于改进的高能量灵敏度和低噪声X射线探测器的制造。这些探测器已被安装在伽马10串列镜等离子体约束装置中，其显著的高能灵敏和低噪声特性为相对论性高电子温度观测和几十eV低温电子测量提供了有用的数据，我们的理论也提供了一种只用一次等离子体激发进行Te观测的新思路;这个想法来自于使用上述新的X射线检测器。目前的研究导致了国际合作，在THA的制造和表征的X射线探测器在DIII-D托卡马克装置（美国）以及。

It is found that the dependence of the x-ray-energy response of semiconductor detectors on various detector parameters is consistently explained by our new theory ; this theory is characterized by a three-dimensional diffusion effect of x-ray produced charges on output signals.This finding significantly modifies the evaluated values of plasma-electron temperatures Te deduced from the conventional theory in textbooks and the recent MIT theory. Our theory is extended so as to analyze multichannel semiconductor array data.These results are successfully applied to fabricate upgraded high-energy-sensitive and low-noise x-ray detectors. These detectors are now installed in GAMMA 10 tandem mirror plasma confining device, and the significant high energy sensitive and low noise characteristic properties provide useful data including relativistic high electron-temperature observations as well as a few tens eV low-temperature electron measurements.Our theory also provides a new idea of Te observations using only one plasma shot ; this idea comes from the use of the above-mentioned new x-ray detectors. The present investigations have lead to an international collaboration in tha fabrication and the characterization of x-ray detectors in the DIII-D tokamak device (U.S.A) as well.