Analisys of CVD Process in Nano-Structured Ferro-Electric Thin Films

1994年，针对固体源、金属有机络合物的控制能力，设计并研制了具有新型源气控制器的热壁CVD反应器。1995年，对高介电薄膜的反应机理和性能进行了分析。在PbTiO3体系中，在过量Pb源气浓度条件下，观察到了自设计的化学计量比控制机制。动力学分析表明，这种化学计量机理是由钛和氧化铅化学计量反应后的高蒸气压导致的。从生长速率分布曲线的测量在反应器中，速率限制过程的PbTiO 3和TiO 2沉积系统被确定为传质过程。根据传质系数估算了各体系的膜生长物种尺寸。薄膜生长过程中各组分尺寸的差异表明Ti源和Pb源气体发生了气相反应，反应机理分析确定了反应条件。

In 1994, focused on the control ability of solid source, metal-organic complex compound, hot wall CVD rector with new source gas controller was designed and prepared. From In-suit measurement of solid source amount with micro-balance, high stability control of source gas were obtained.In 1995, analysis on the reaction mechanism and properties of high-dielectric films were performed. In PbTiO3 system, the self-designed stoichiometric composition controlled mechanism were observed under excess Pb source gas concentration condition. The kinetically analysis showed by the high vapor pressure of lead oxide deposition of stoikiometric reacted titanium and lead oxide caused this self-designed stoikiometric mechanism. From the growth rate distribution profile measurement in the reactor, ratelimiting processes of both PbTiO3 and TiO2 deposition systems were determined as mass-transfer processes. The film growth species size of each systems were estimated from mass-transfer coefficient. The difference of each film growth species size indicated the gas-phase reaction of Ti source and Pb source gas.These reaction mechanism analysis determined the reaction conditions.