Physics and Application of Spin-Related Phenomena in Semiconductors

对半导体量子结构中自旋相关现象进行了实验和理论研究，以建立(1)具有明显自旋效应的半导体量子结构的制造工艺。(2)对此类结构中自旋相关现象的理解，以及(3)利用与电子自旋相关的新自由度在半导体量子结构中的可能应用。1995年12月20日至21日在东北大学电子通信研究所和1997年1月27日至28日在仙台国际中心举行了两次题为“半导体中自旋相关现象的物理和应用研讨会”的专题讨论会，以弥合半导体材料和磁性材料之间的差距。以下结果是本项目过程中获得的研究成果。(1)磁性材料在Si上的外延生长(2)一种新型III-V基铁磁稀释磁性半导体（GA,Mn）As(3)半导体纳米结构对磁性离子交换相互作用的控制(4)自由磁极化子存在的实验验证

Expermental as well as theoretical research on spin related phenomena in semiconductor quantum structures has been conducted in order to establish (1) fabrication processes of semiconductor quantum structures with pronounced spin effects.(2) understanding of the spin related phenomena in such structures, and (3) possible application of the semiconductor quantum structures using the new degree of freedom related to spin of electrons. Two Symposia named "Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors" were held at the Research Institute of Electrical Communication, Tohoku University on December 20-21,1995, and at the Sendai International Center on January 27-28,1997 in an effort to bridge the gap between the Semiconductor Materials and the Magnetic Materials. Following results are among those the research results obtained in the course of the present project.(1) Epitaxial growth of magnetic materials on Si(2) A new III-V based ferromagnetic diluted magnetic semiconductor, (GA,Mn)As(3) Control of exchange interaction among magnetic ions by semiconductor nanostructures(4) Experimental verification of the existence of free magnetic polarons