Low temperature growth of polycrystalline semiconductor and diamond films

为了在低温下制备多晶硅薄膜，氢自由基已被用于射频溅射工艺中。薄膜是在含有氩气和氢气的混合气体中制备的。通过反射电子衍射和拉曼光谱对其进行了研究。此外，还利用发射光谱研究了等离子体中氢自由基的数量，实验结果表明，在衬底温度低于200 ℃时也能生长出多晶硅薄膜，发射光谱分析表明，多晶硅薄膜中存在原子团簇结构，在等离子体条件下，多晶硅薄膜中存在原子团簇结构氢自由基具有约10eV的高能量。它们被期望能够重构衬底上的硅原子。因此，在如此低的温度下的结晶被认为主要是由于等离子体中的氢自由基。结构 ...更多信息 用X射线衍射、反射电子衍射和透射电子显微镜研究了多晶硅薄膜的微观结构。通过红外吸收、光吸收、电子自旋共振和电导率的测量，研究了薄膜的电学和光学性质。采用射频平面磁控溅射技术，利用氢原子自由基在低温下在衬底上制备多晶硅薄膜。X射线衍射、反射电子衍射和透射电子显微镜分析表明，晶体硅晶粒以[100]织构生长，晶粒尺寸为10 - 20 'nm.红外吸收和光学吸收测量结果表明，在2 ≤ P_&lt;= 7mTorr范围内，氢含量随氢分压的增加而减少，这是由于硅-硅键的形成，在7 ≤ P_&lt;= 12mTorr范围内，氢含量随氢分压的增加而逐渐增加，这表明在较高的氢分压下，硅膜中的悬挂键更多地被终止.<H2><H2><H2><H2>这些事实也解释了电导率的测量，它被发现，在最高的氢分压下制备的多晶硅膜具有最低的跳跃点密度在这项工作中观察到的膜。少

In order to make polycrystalline silicon films at low temperature, hydrogen radicals have been utilized in the rf sputtering process. The films were prepared in gas mixtures containing argon and hydrogen. They were investigated by reflection electron diffraction and Raman spectroscopy. Furthermore, optical emission spectroscopy was employed to study the quantity of hydrogen radicals in the plasma, and the plasma potential was measured to decide the substrate bias voltage under realistic plasma condition for the deposition of silicon films.The results showed that polycrystalline silicon films were grown even at the substrate temperature of less than 200ﾟC.It was also found from the optical emission spectroscopy that there existed atomic hydrogen radicals with high energy of about 10eV.They are expected to be able to restructure the silicon atoms on the substrate. Thus the crystallization at such low temperature is considered to be mainly due to hydrogen radicals in the plasma.Structure … More of polycrystalline silicon films was investigated by X-ray diffraction, reflection electron diffraction and transmission electron microscopy. Furthermore, electrical and optical properties of the films were studied with the measurements of IR absorption, optical absorption, electron spin reesonance and electrical conductivity. The films were prepared by rf planar magnetron sputtering, in which process atomic hydrogen radicals were utilized in order to make the polycrystalline silicon films on the substarate at low temperature. Its was shown from X-ray diffraction, reflection electron diffraction and transmission electron microscopy that most of crystal silicon grains grew with a [100] texture, and that the grain sizes were 10--20'nm.The results obtained from IR absorption and optical absorption measurements were as follows ; hydrogen content decreased with the increase of hydrogen partial pressure (P_<H2>) in the range of 2<=P_<H2><=7mTorr, which was caused by the formation of Si--Si bonds, and in the range of 7<=P_<H2><=12mTorr, however, hydrogen content increased gradually with P_<H2>, which suggested that dangling bonds in the silicon films were more terminated in the higher hydrogen partial pressure. These facts were also explained by the electrical conductivity measurement, and it was found that the polycrystalline silicon film prepared under the highest hydrogen partial pressure had the lowest hopping site density in the films observed in this work. Less