Epitaxial Growth and Applications of New Dissimilar Heterostructures

在“异质外延生长与新异质结构应用”领域开展国际合作。近年来外延生长技术的进步使得制备各种不同材料组成的新型人工薄膜和异质结构（HS’s）成为可能。不同的hs包括外延铁磁/半导体hs，如MnGa/GaAs， MnAs/GaAs，铁磁半导体(GaMnAs)/非磁性半导体（GaAs, AlAs）和半金属(ErAs)/III-V （GaAs/AlAs）。我们利用分子束外延（MBE）技术成功地生长了这些新型的人造高速钢，并揭示了它们的结构、电子、光学和磁性能。我们的研究澄清的一些性质被发现对某些器件应用有用，例如磁性非易失性存储器，耦合III-V半导体电子/光学电路的光隔离器，以及三端谐振隧道器件和高速金属基晶体管。

We have performed international collaborations on "Epitaxial Growth and Applications of New Dissimilar Heterostructures". Recent progress of epitaxial growth technology has made it possible to prepare a variety of new artificial thin films and heterostructures (HS's) consisting of dissimilar materials. The dissimilar HSs include epitaxial ferromagnet/semiconductor HSs such as MnGa/GaAs, MnAs/GaAs, ferromagnetic-semiconductor (GaMnAs)/nonmagnetic-semiconductor (GaAs, AlAs), and semimetal (ErAs)/III-V (GaAs/AlAs). We have succcessfully grown these new artificial HSs by using molecular beam epitaxy (MBE), and revealed their structural, electronic, optical and magnetic properties. Some of the properties clarified by our research are found to be useful for some device applicatiopns, such as nagnetic nonvolitile memory, optical isolators coupled III-V semiconducror electronic/optical circuitry, as well as three terminal resonant tunneling devices and high speed metal-base transistors.