Semiconductor Spintronics Heterostructure Electronic Devices

半导体自旋电子学异质结构电子器件

• 批准号: 14076207
• 负责人: TANAKA Masaaki
• 金额: $ 27.52万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14076207/
• 关键词: Spintronics; Electronic device; Heterostructure; Tunneling magnetoresistance; Spin MOSFET; GeFe; GeMn; GaMnAs; MnAs微粒子; スピン依存伝導; 共鳴トンネル効果; デルタドープ; 選択ドープヘテロ構造; 強磁性転移温度; 強磁性半導体; 磁気抵抗効果; ヘテロ構造電子デバイス; 強磁性トンネル接合; キャリアスピン; 電子スピントロニクスデバイス; Mn

We have developed a variety of spintronic heterostructures, Mn-delta-doped GaAs/p-AlGaAs with high Curie temperatures, GaMnAs/AlAs magnetic tunnel junctions with a single AlAs barrier and double AlAs barriers exhibiting clear TMR and resonant tunneling, a new group-IV based ferromagnetic semiconductor GeFe, proposed a new spin transistor (spin MOSFET) and, reconfigurable logic devices. These studies have contributed to the advance of spintronic heterostructure materials and devices, and increased the freedom of design and controllability.

我们已经开发了多种自旋电子异质结，Mn-δ掺杂GaAs/p-AlGaAs具有高居里温度，GaMnAs/AlAs磁性隧道结具有单一的AlAs势垒和双AlAs势垒，具有明显的TMR和共振隧穿，一种新的IV族基铁磁半导体GeFe，提出了一种新的自旋晶体管（自旋MOSFET）和，可重构逻辑器件。这些研究促进了自旋电子异质结材料和器件的发展，增加了设计的自由度和可控性。

项目成果

Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-doped Ge Thin Film

外延生长的Mn掺杂Ge薄膜中非晶铁磁半导体相的沉淀

• 发表时间: 2005
• 期刊: Japanese Journal of Applied Physics (Express Letter) 44
• 作者: S.Sugahara;K.L.Lee;S.Yada;M.Tanaka
• 通讯作者: M.Tanaka

S.Sugahara, M.Tanaka: "Epitaxial Growth and Magnetic Properties of MnAs/AlAs/MnAs Magnetic Tunnel Junctions on Exact (III)B GaAs Substrates : the Effect of a Ultrathin GaAs Buffer Layer"Journal of Crystal Growth. 251. 317-322 (2003)

S.Sugahara、M.Tanaka：“精确 (III)B GaAs 衬底上 MnAs/AlAs/MnAs 磁隧道结的外延生长和磁性特性：超薄 GaAs 缓冲层的影响”晶体生长杂志。

A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

• DOI: 10.1063/1.1689403
• 发表时间: 2004-03-29
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Sugahara, S;Tanaka, M
• 通讯作者: Tanaka, M

S.Sugahara, M.Tanaka: "Tunneling Magnetoresistance in Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions Grown on Vicinal GaAs(111)B Substrates"Applied Physics Letters. Vol.80. 1969-1972 (2002)

S.Sugahara、M.Tanaka：“在邻位 GaAs(111)B 衬底上生长的全外延 MnAs/AlAs/MnAs 铁磁隧道结中的隧道磁阻”应用物理快报。

Magnetic properties of heavily Mn-doped quaternary alloy magnetic semiconductor (InGaMn)As grown on InP

InP 上生长的重 Mn 掺杂四元合金磁性半导体 (InGaMn)As 的磁性能

• 发表时间: 2003
• 期刊: Appl.Phys.Lett. 83
• 作者: S.Ohya;H.Kobayashi;M.Tanaka
• 通讯作者: M.Tanaka