Development of high quality ferromagnetic tunnel barrier and realization of tunneling spin filter devices

高质量铁磁隧道势垒的研制及隧道自旋过滤器件的实现

• 批准号: 22740223
• 负责人: TANAKA Masaaki
• 金额: $ 2.33万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22740223/
• 关键词: スピントロニクス; コバルトフェライト; トンネル型スピンフィルター効果; トンネル磁気抵抗効果; 強磁性絶縁体; スピンフィルター効果; トンネル磁気抵抗果

In this study, tunneling-spin filtering effect of ferromagnetic insulator CoFe_2O_4 with perpendicular magnetic anisotropy was studied. To improvement surface flatness of CoFe_2O_4 films, the films were grown on MgO(001) substrates by pulse laser deposition method with a shadow mask. The CoFe_2O_4 films without droplet formation with perpendicular anisotropy energy density of 2.36x106 erg/cm3 were obtained. Magnetoresistance measurements were carried out for magnetic tunnel junctions (MTJs) using MgO/CoFe_2O_4 and ferromagnetic metal L10-type FePd electrodes fabricated on MgO (001) substrates. The tunnel magnetoresistance ratio of 0.7% at 5 K and 16.5% at 300 K was obtained for the MTJs.

本文研究了具有垂直磁各向异性的铁磁绝缘体CoFe_2O_4的隧穿-自旋过滤效应。为了提高CoFe_2O_4薄膜的表面平整度，采用脉冲激光沉积法在MgO（001）衬底上制备了CoFe_2O_4薄膜。得到了无液滴形成的CoFe_2O_4薄膜，垂直各向异性能量密度为2.36 × 106 erg/cm ~ 3。采用MgO/CoFe_2O_4和在MgO（001）衬底上制备的铁磁金属L10型FePd电极对磁性隧道结（MTJ）进行了磁电阻测量。在5 K和16.5%，在300 K的MTJ的隧道磁电阻比为0.7%。

项目成果

Studieson spin-filtering CoFe_2O_4 layers forroom-temperature TMR effect

自旋过滤CoFe_2O_4层室温TMR效应研究

• 发表时间: 2012
• 作者: R. Yamanaka;K. Matsubayashi;Y. Saiga;T. Kawae;Y. Uwatoko;奈木南,中川浩次,田中雅章,壬生攻
• 通讯作者: 奈木南,中川浩次,田中雅章,壬生攻