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Negative-Ion Beam Material Processing Techniques

Negative-Ion Beam Material Processing Techniques
负离子束材料加工技术
批准号:
08044140
负责人:
ISHIKAWA Junzo
金额:
$3.84万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997

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中文摘要
翻译
1.负离子注入透镜的强流负离子引出和加速技术和引入气体的电荷补偿对强流离子束空间电荷引起的束流发散是有效的。在我们的射频等离子体溅射型重负离子源中,一种新的供气方式带来了F、O、CN等Ma类负离子的产生。负离子注入技术及其在材料加工中的应用在负离子注入过程中,由于在注入过程中形成双电层,绝缘体的表面电势只有几伏。这是一种免费的植入方法。(1)发展了无散射和均匀的负离子注入粉末的方法;(2)负离子注入控制了用于医疗和生物…的聚合物的生物相容性。3.低能负离子和负离子束沉积装置的减速技术在衬底生效前的减速,可以抑制束流发散。4.低能负离子束在材料加工中的应用作为材料加工技术,我们研究了利用负离子束进行离子束沉积和刻蚀。(1)在低能量下,C和CN负离子束沉积可以生成类金刚石和氮化碳等亚稳态材料薄膜。(2)在低能量下,氟-负离子刻蚀可以有效地以低损伤刻蚀Si和SiO_2薄膜。因此,在低能量下,C和CN负离子束沉积可以生成类金刚石和碳氮化物等亚稳态材料薄膜。因此,在低能量下进行氟离子刻蚀可以有效地刻蚀Si和SiO_2薄膜。因此,我们研究了强流负离子束的加速和减速技术,并研制了负离子装置。建立了低能沉积、刻蚀和高能注入的负离子束技术作为材料加工技术。较少
英文摘要
l.High Current Negative-Ion Extraction and Acceleration Techniques for Negative-Ion ImplanterA lens equipped just after an extractor and charge compensation by introduced gas were effective for beam divergence due to space charge of high current ion beam. A method of gas supply brought a new production of mA-class negative ions such as F,O,and CN in our RF plasma-sputter-type heavy negative-ion source. With this ion source, a negative-ion implanter was developed which could accelerate negative ions up to 100keV.2.Negative-Ion Implantation Technique and Application to Material ProcessingIn the negative-ion implantation, a surface potential of insulators is only several volts due to formation of an electric double layr during implantation. This is a charging-free implantation method. (1) non-scattering and uniform negative-ion implantation method for powders was developed, and (2) negative-ion implantation was found to control biocompatibility of polymers used in medical and biological f … More ields.3.Deceleration Technique for Low Energy Negative-Ion and Negative-Ion Beam Deposition ApparatusDeceleration just before substrate was effective, and could suppress beam divergence. We constructed a negative-ion beam deposition apparatus in an ultra-high vacuum and an negative-ion etching system.4.Application of Low-Energy Negative-Ion Beams to Material ProcessingAs material processing technique, we investigated ion beam deposition and etching by using negative-ion beam.(1) C and CN negative-ion beam deposition at a low energy was found to create metastable material films such as diamond-like carbon and carbon nitride.(2) Fluorine-negative-ion etching at a low energy could effectively etch Si and SiO_2 film with a low damage.Thus, we investigated techniques of acceleration and deceleration of a high-current negative ion beam and developed negative ion apparatus. Negative-ion beam techniques of low energy deposition, etching and high energy implantation was established as material processing techniques. Less
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石川 順三: "負イオンの発見から現在の応用に至るまで" アイオニクス. 第23巻. 1-6 (1997)
Junzo Ishikawa:“从负离子的发现到其当前的应用”,Ionics,第 23 卷,1-6 (1997)。
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Hiroshi Tsuji: "Negative-Ion Production of Reactive Elements from Compound Gases in the RF Plasma-Sputter-Type Heavy Ngative-Ion Source" Ion Implantatin Technology-96. IEEE96TH8182. 334-337 (1997)
Hiroshi Tsuji:“在射频等离子体溅射型重负离子源中从复合气体中产生活性元素的负离子”离子注入技术-96。
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共 43 条
    Development of Nitride and Carbide Cathodes for Realization of Highly Stable Vacuum Micro Electron Sources
    • 批准号:
      12135204
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $17.98万
    • 财政年份:
      2000
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Ion Beam Processing of Polymeric Biomaterials
    • 批准号:
      11694148
    • 项目类别:
      Grant-in-Aid for Scientific Research (B).
    • 资助金额:
      $3.01万
    • 财政年份:
      1999
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Establishment of Charging Free and Non-Scatter Implantation Technology for Micro Powders by Using Negative-Ion Beam
    • 批准号:
      08555172
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $12.74万
    • 财政年份:
      1996
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    Development of Charge-up Free lon lmplantation by Using Negative lon Beam
    • 批准号:
      05555008
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $10.62万
    • 财政年份:
      1993
    • 负责人:
      ISHIKAWA Junzo
    • 依托单位:
    海外基金