Semiconductor coupled SAW device
Semiconductor coupled SAW device
批准号:
11650356
负责人:
HOHKAWA Kohji
金额:
$2.62万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2002
中文摘要
在本文中,我们研究了saw -半导体耦合集成电路,与两种器件的简单组合相比,它具有优异的特性。我们展示了以下结果。1)在制作工艺方面,我们研究了用于saw -半导体耦合集成电路制作的外延- lift - off薄膜键合工艺,得到了以下结果:我们研究了基本的制作工艺;以更快的速度和无损伤的方式从母衬底上剥离半导体薄膜,表面处理以实现紧密结合,利用x射线形貌澄清结合机理,以及实现大规模生产的一些基本技术。2)器件技术:研究了半导体中SAW与载流子传播产生的电场相互作用和势场分布。在此基础上,我们提出了光信号控制振荡器、可变相位器件等新功能器件。本文还对各种高速无线通信系统的功能器件进行了研究。我们提出了一种高性能的卷积器和可变相关器,并通过实验验证了这些器件的实用性。我们还提出了分布式半导体耦合模拟处理SAW器件,该器件将在未来发挥重要作用。
英文摘要
In this paper, we investigated SAW-semiconductor coupled integrated circuits, which have excellent characteristics compared to devices consisting of a simple combination of two kinds of devices. We have shown the following results.1) As the fabrication technology, we investigated Epitaxial-Lift-Off film bonding process for fabricating the SAW-semiconductor coupled integrated circuit and obtained following results : We have studied basic fabrication process ; higher speed and damage free semiconductor film peeling from its mother substrate, surface treatment for a tight bonding, clarification of bonding mechanism using X-ray topography, and some basic technologies for the way to the mass-productivity.2) Device technology : We studied the interaction between the electric field caused by the propagating SAW and carriers and potential field distribution in a semiconductor. Based on this study, we proposed new function devices such as optical signal controlled oscillator, a variable phase device, and etc. We also studied devices, which are useful for the functional devices for many kinds of high-speed wireless communication systems. We proposed a high performance convolver, variable correletor and verified theusefullness of these devices experimentally. We also proposed distributed semiconductor coupled analog processing SAW device, which will be useful in a future.
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T. Arai, M. Goto, K. Horikoshi, S. Mashino and S. Aikyo: "Effects of Fluorocarbon Films on CF Radical in CF_4/H_2 Plasma"Jpn. J. Appl. Phys.. Vol. 38. 4377-4379
T. Arai、M. Goto、K. Horikoshi、S. Mashino 和 S. Aikyo:“氟碳薄膜对 CF_4/H_2 等离子体中 CF 自由基的影响”Jpn。
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S.Nam, Y.Aoki, C.Kaneshiro, K.Koh, K.Hohkawa: "A Trial for Integrating Front End Circuits on a Substrate of SAW Device Employing ELO"Proceedings on IEEE Ultrasonic Stmposium. (to be pubrished). (2001)
S.Nam、Y.Aoki、C.Kaneshiro、K.Koh、K.Hohkawa:“在采用 ELO 的 SAW 器件基板上集成前端电路的试验”IEEE 超声波研讨会论文集。
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Chinami Kaneshiro, Tsutomu Nakajima, Ken-ichiro Miyadai, Yusuke Aoki, Keishin Koh, Kohji Hohkawa: "X-Ray Analysis of stress Distribution in Semiconductor Films Bonded to a Piezoelectric Sub strate"Jpn. J. Appl. Phys. Vol.41,No.6A. 4000-4006 (2002)
Chinami Kaneshiro、Tsutomu Nakajima、Ken-ichiro Miyadai、Yusuke Aoki、Keishin Koh、Kohji Hohkawa:“接合到压电基板的半导体薄膜中的应力分布的 X 射线分析”Jpn。
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Kohji Hohkawa, Takaya Suda, Yusuke Aoki, Chinami Kaneshiro and Keishin Koh: "Simulation Study on Semiconductor Coupled Surface Acoustic Wave Convolver through a Multi-Strip Electrodes"Jpn. J. Appl. Phys.. Vol. 40, No. 5B. 3740-3746 (2001)
Kohji Hohkawa、Takaya Suda、Yusuke Aoki、Chinami Kaneshiro 和 Keishin Koh:“通过多带电极对半导体耦合表面声波卷积器进行仿真研究”Jpn。
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共 43 条
Study on Surface acoustic wave/semiconductor functional devices
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批准号:08650414
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.41万
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财政年份:1996
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负责人:HOHKAWA Kohji
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依托单位:
海外基金