EXCELLENT TEMPERATURE CHARACTERISTIC 1.2 μm SINGLE-MODE SEMICONDUCTOR LASERS AND ITS APPLICATION TO ULTRA-HIGH SPEED OPTICAL LINKS

我们实现了GaInAs/GaAs应变量子阱的波长扩展，开辟了1.0-1.2μm的新波段，并在MOCVD中新引入了应变缓冲层，建立了生长条件，使我们能够生长出应变大于2%的高应变层。在不降低晶体质量的情况下，生长的GaInAa量子阱的光致发光波长可以扩展到1.2μm以上，我们用1.2μm的GaInAs量子阱制作了50μm宽的宽带激光器。宽面激光器的最低阈值电流密度为170A/cm2(双量子阱)。图3显示了高达170℃的不同散热器温度下的L/i曲线。特征温度T0在2 0 0K以上，在1 2~1 3μm波段最高。脊波导器件可以在连续波操作下工作，而不需要在散热片上粘合。利用GaInAs制作垂直腔面发射激光器(VCSEL)，在高注入条件下，某些器件的激光波长超过1.25GaInAs/μ系统的最长波长。我们实现了阈值电流为0.9 mA，高温工作高达170℃，高可靠性>2000小时。该器件生长在GaAs(311)B衬底上，具有30db的大的正交极化抑制比(OPSR)。在VCSLE中实现了单纵模、基横模和偏振。该器件具有高达180℃的良好温度特性。我们还在图案化衬底上实现了波长为1.1-1.2μm的多波长垂直腔面发射激光器阵列，实现了2.5 Gb/S×4通道的数据传输。

We realized the wavelength extension of GaInAs/GaAs strained quantum wells1) to open up a new wavelength band of 1.0-1.2 μm. We newly introduced a strained buffer layer and established growth conditions in MOCVD, enabling us to grow highly strained layers with a strain of over 2 %. The PL wavelength of grown GaInAa QWs could be extended to be over 1.2 μm without any degradation in crystal qualities.We fabricated 50 μm wide broad area lasers with 1.2 μm GaInAs QWs. The lowest threshold current density of broad area lasers is 170 A/cm2 for double QWs. Figure 3 shows various L/I curves at different heat sink temperatures up to 170 ℃. A characteristic temperature T0 under is over 200 K, which is the highest at 1.2〜1.3 μm wavelength band. Ridge waveguide devices can be operated under cw operation without bonding on heat-sink. Some devices under high injection showed a lasing wavelength beyond 1.25 μm, which is the longest wavelength ever reported for the GaInAs/GaAs system.We fabricated vertical cavity surface emitting lasers (VCSELs) with GaInAs. We achieved a threshold current of 0.9 mA, high-temperature operation of up to 170 ℃, and high reliability of 〉2000 hours. This device was grown on GaAs(311)B substrate, showing large orthogonal polarization suppression ratio (OPSR) of 30dB. We realized single longitudinal, fundamental transverse-mode and polarization in the VCSLE. The device shows an excellent temperature characteristics up to 180 ℃.We also demonstrated a multi-wavelength VCSEL array on a patterned substrate in a wavelength band of 1.1-1.2 μm. We carried out data transmission with 2.5 Gb/s x 4 channels was achieved.