Trial manufacture offine finish diamond etching machine using electron, ion, and laser beam.

在此期间，我们已经完成了电子束和离子束金刚石刻蚀机的试制。该机由真空室、辅助气体注入喷嘴、样品架和ECR离子源组成，在引出栅极时施加双极偏压，可产生离子束和电子束。利用该设备研究了不同离子刻蚀方法如离子束刻蚀(ME)、反应离子束刻蚀(REBE)、离子束辅助刻蚀(D3AE)和反应离子束刻蚀(RIBAE)对金刚石比刻蚀速率的加速电压依赖关系。结果表明，加速电压与刻蚀比速率之间存在非线性关系。此外，用X射线光电子能谱(XPS)研究了不同离子束刻蚀的辐照损伤。所有的离子束刻蚀方法都会引起石墨化转变，但我们发现RIBAE是一种无损伤的工艺。

In this term, we have finished the trial manufacture offine finish diamond etching machine using electron and ion beam. The constitution of this machine is vacuum chamber, assist gas injection nozzle, sample holder, and ECR ion source, which can produce ion beam and electron beam because ofbipolar bias applied to extract grid. Using this machine, acceleration voltage dependence of specific etching rate of diamond with various ion etching methods such as ion beam etching (ME), reactive ion beam etching (REBE), ion beam assisted etching (D3AE) and reactive ion beam assisted etching (RIBAE) were examined. As the results, non-liner dependence was observed between acceleration voltage and specific etching rate. Furthermore, irradiation damage of various ion beam etching was examined with X-ray Photoelectron Spectroscopy (XPS). All of ion beam etching methods caused graphitic transition, however, we found RIBAE was damage less process.