Chemical reaction control in nano-area by radiation -transformation of radiation physics to radiation chemistry -

(1)利用电子、离子、激光光子等多种辐射作为探针，开发了新的原位分析方法来研究离子注入引起的材料近表面改性。(2)应用本研究开发的EXELFS和EELS对石墨的损伤过程进行了表征。结果表明，在电子和离子辐照下均可形成与sp^2不同的新型键。(3)上釉入射电镜也被开发出来，并成功应用于表面修饰，如形成水疱。提出了一种基于延性转变的共价和半导体材料起泡机理。(4)应用分子动力学方法对离子辐照下SiC的溶胀进行了研究，发现该方法非常有效。发现在SiC中，除了孔洞膨胀外，Si-Si和Si-C原子之间键长和Si-C- si键角的变化也是导致膨胀的附加机制。(5)采用纳米鉴定方法考察了离子注入对材料表面力学性能的影响，成功提取了材料在纳米厚度下的强度。(6)应用各种模拟程序，对纳米范围内的能量转换或损伤过程进行了广泛的研究。发现电子激发在共价材料和半导体材料的损伤过程中起着非常重要的作用。(7)成功地证明了γ射线通过产生二次电子和光子的能量转换。研制了一种由γ射线源驱动的新型电池。

(1) New in situ analysis methods to study materials modification near surface regions brought by ion implantation were developed utilizing various radiation like electrons, ions, laser photons, as a probe.(2) Applying EXELFS and EELS, developed by this study, damage process of graphite was examined. It is clearly demonstrated that some new type of bonding different from sp^2 accompanying flouren type structure formation in both electron-and ion-irradiation.(3) Glazing incidence electron microscopy was also developed and successfully applied for the surface modification like a blister formation. A new blistering mechanism was proposed for covalent and semiconductor materials based on ductile transformation.(4) Molecular dynamic approach was applied to examine the swelling of SiC by ion irradiation and probed to be very effective. It was found that in SiC, an additional mechanism i.e. changes of bond length between Si-Si and Si-C atoms and bond angles of Si-C-Si is contributing the swelling in addition to the void swelling.(5) The nano-identation method was also applied to examine change of surface mechanical properties by ion implantation and the material strength in nanometer thickness was successfully extracted.(6) Appling various simulation codes, energy conversion or damaging process in nano-range was extensively studied. It was found that electron excitation play very important role in damaging process of covalent and semiconductor materials.(7) Energy conversion of γ-ray through production of secondary electrons and photons was successfully demonstrated. A new electric cell driven by γ-ray source was developed.