Research on technology for integrating silicon nanocrystals into photonic crystals and its application to optical devices

我们用射频溅射方法制备了具有纳米级厚度的Si/SiO_2多层膜，样品经高温处理后获得了紫外光发射。特别是，在1200℃的温度下，我们发现在370 nm附近有一个尖锐的紫外峰。紫外光的发射似乎来自硅层，它可能转变为硅纳米晶(Si-NC‘s)，以及Si-NC’s和SiO_2层之间的界面层。采用硅离子注入和高温退火法制备了蓝光发光的熔融二氧化硅衬底。它们的蓝色光致发光峰位于400 nm附近。我们发现，经过1200℃的退火后，峰强度可以比长波长峰的强度大4倍以上。蓝光发射似乎既来自于Si-NC，也来自于在熔融二氧化硅衬底上产生的Si-NC和SiO_2介质之间的界面层。我们正在努力优化…更多的条件，硅离子注入和退火，以提高发射强度和评估样品的光学增益。紫外光或蓝光发射材料可用于更高密度光盘系统的光源。如果利用硅基材料实现这种光源，将具有与大规模集成电路匹配、成本较低、适用于环境应用等优点。我们采用射频溅射、双干涉曝光、等离子体刻蚀等方法制备了从红光到红外线发射波长的Si：SiO_2二维光子晶体。从样品中观察到增强的光致发光光谱。我们发现光致发光峰位于800 nm附近，并且通过引入周期结构可以使峰值强度提高1.5倍。这种具有周期结构的Si：SiO_2薄膜也可用作自克隆光子晶体的衬底。我们将能够利用我们的技术实现硅基发光器件。较少

We deposited Si/SiO_2 multilayers having nanometer-order-thick Si and SiO_2 layers using radio-frequency sputtering and obtained ultraviolet (UV) -light emission from the samples after high-temperature annealing. In particular, we found a sharp UV peak around a wavelength of 370 nm after annealing at 1200 ℃. The UV-light emission seems to originate from Si layers, which may be transformed into Si nanocrystals (Si-nc's), and interface layers between Si-nc's and SiO_2 layers. Fused-silica substrates that emit blue light were also fabricated by using Si-ion implantation and high-temperature annealing. Their blue-photoluminescence peaks were located at around a wavelength of 400 nm. We found that the peak intensity can be over four times greater than that of the longer wavelength peak after annealing at 1200 ℃. The blue-light emission seems to originate from both Si-nc's and interface layers between Si-nc's and SiO_2 media produced in fused-silica substrates. We are trying to optimize the … More conditions of Si-ion implantation and annealing to improve the emission intensity and evaluate optical gains of the samples. UV- or blue-light emitting materials can be useful for light sources of higher-density optical-disk systems. If we realize this kind of light source utilizing Si-based materials, we will obtain many benefits, such as matching for LSI's, lower cost, and suitability for environment application.We fabricated an Si: SiO_2 two-dimensional photonic crystal that emits light at wavelengths from red to infrared by using radio-frequency sputtering, double-interference exposure, and plasma etching. An enhanced photoluminescence spectrum was observed from the sample. We found that the photoluminescence peaks were located at around a wavelength of 800 nm and that the peak intensity can be increased 1.5 times by introducing a periodic structure. Such Si: SiO_2 films with periodic structures can also be useful as substrates of autocloned photonic crystals. We will be able to realize Si-based light-emitting devices utilizing our technologies. Less