Investigating ways to improve the performance of semiconductor nuclear radiation detectors

为提高具有能量分辨能力的半导体核辐射探测器的性能，进行了研究。这些异质结二极管型探测器是基于在Si衬底上外延生长的厚CdTe层。通过优化晶体生长参数和对生长晶体进行退火处理，提高了CdTe晶体质量，降低了探测器暗电流噪声。我们找到了晶体生长和退火的最佳条件，这有助于抑制晶体缺陷，降低探测器暗电流。结果证实了探测器性能的提高。

Investigations were performed to improve the performance of semiconductor nuclear radiation detectors that possess energy discrimination capability. These heterojunction diode type detectors are based on epitaxially grown thick CdTe layers on Si substrates. Efforts were made to improve the CdTe crystal quality and decrease the detector dark current noise by optimizing crystal growth parameters and annealing the grown crystals. We found the best conditions for the crystal growth and the annealing, which help to deactivate the crystal defects, and reduce the detector dark current. As a result, improvement of the detector performance was confirmed.