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Preparation and application of crystalline template layers on no crystalline substrates by a quasi-nanoimprinting method

Preparation and application of crystalline template layers on no crystalline substrates by a quasi-nanoimprinting method
准纳米压印法在无晶基底上制备结晶模板层及应用
批准号:
20560003
负责人:
SATO Yuichi
金额:
$3.0万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2010

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中文摘要
翻译
研究了结晶模板层的材料和生长条件。研究了模板层材料与半导体材料的匹配关系。在制备In_2O_3模板层时,将In_2O_3薄膜的热处理气氛由无活性气氛转变为含氧气氛,并控制In_2O_3薄膜的结晶。其他结晶金属薄膜也可以在狭窄的结晶条件下得到。所制备的In_2O_3薄膜可作为多种化合物半导体薄膜的模板层。
英文摘要
Materials and growth conditions for the crystalline template layers were investigated. Matching between materials of the template layers and semiconductors were also investigated. Heat-treatment atmosphere of In thin films was varied from inactive to oxygen included one in preparation of In_2O_3 template layers and their crystallization was controlled by it. Other crystalline metal films could be also obtained in narrow windows of their crystallization conditions. The In_2O_3 films were possible to be applied as template layers for several compound semiconductor films.
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会议论文
In薄膜の熱酸化・再結晶化によるIn_2O_3薄膜の作製
In薄膜热氧化及再结晶制备In_2O_3薄膜
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [大竹文人, 羽鳥裕俊, 小坂井啓一, 佐藤祐一]
通讯作者: 佐藤祐一
A Dependence of Crystallinity of In_2O_3 Thin Films by a Two-Step Heat Treatment of Indium Films on the Heating Atmosphere
铟膜两步热处理制备的In_2O_3薄膜结晶度对加热气氛的依赖性
DOI: --
发表时间: 2010
期刊: J. Mod. Phys
影响因子: --
作者: [Yuichi Sato, Fumito Otake, Hirotoshi Hatori]
通讯作者: Hirotoshi Hatori
In_2O_3下地層を有するサファイア基板へのIII族窒化物薄膜の成長
In_2O_3底层蓝宝石衬底上III族氮化物薄膜的生长
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [伊藤一樹, 原田康平, 船木昂介, 竹本皓樹, 岩城雅人, 佐藤祐一]
通讯作者: 佐藤祐一
真空蒸着法により作製したInドープCdTe薄膜のPL特性
真空蒸镀法制备In掺杂CdTe薄膜的PL特性
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [小舘達, 荒井学, 佐藤祐一]
通讯作者: 佐藤祐一
共 14 条
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