Analysis of interface between electrode and zinc oxide semiconductor for ultraviolet photo device

肖特基接触是保证电极与氧化锌（ZnO）之间可整流性的关键，氧化锌可作为紫外光器件。然而，稳定肖特基接触电极的形成是难以控制的。需要阐明接触与材料性能之间的关系。利用高压高分辨率透射电镜对模型体系Pd/ZnO界面进行了分析。定量地确定了局部原子结构，用第一性原理计算模拟了界面电态。可以阐明局域原子结构与电性质之间的关系。

Schottky contact is essential for rectifiability between electrode and zinc oxide (ZnO) which can be applied as ultraviolet photo device. However, it was difficult to control formation of the electrode with stable Schottky contact. Elucidation of correlation between contacts and material properties has been required. Pd/ZnO interface was analyzed as model system by using a high-voltage high-resolution transmission electron microscope. The local atomic structure could by quantitatively determined and the interfacial electric state was simulated by first principle calculation. The correlation between the local atomic structure and electric properties could be elucidated.